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参数资料
| 型号： | NAND512R3B3BZA6E |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
| 封装： | 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63 |
| 文件页数： | 55/59页 |
| 文件大小： | 998K |
| 代理商： | NAND512R3B3BZA6E |
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NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
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相关PDF资料 |
PDF描述 |
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| NAND512W3B3BN6E | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3B3BZA6E | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512W3B3AN1 | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3B3BN1F | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND04GR4B3AN1 | 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND512R4A2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND512R4A2CZA6 | 制造商:Micron Technology Inc 功能描述:512MB. 3V X8 NO OPTION TSOP48TSOP-1 48 12X20 AL 42 - Trays |
| NAND512R4A2DDI6 | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND512W3A0AN6 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND512W3A0AN6E | 功能描述:闪存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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