参数资料
型号: NAND512R3M0BZBE
厂商: STMICROELECTRONICS
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA107
封装: 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-107
文件页数: 20/22页
文件大小: 200K
代理商: NAND512R3M0BZBE
NAND256-M, NAND512-M, NAND01G-M
Summary description
7/22
LPSDRAM Component
The NAND256-M and NAND512-M devices contain either:
one M65KA256AL: 256 Mbit (x16) Single Data Rate (SDR) LPSDRAM
two M65KA256AL: 256 Mbit (x16) Single Data Rate (SDR) LPSDRAMs (SDR0 and
SDR1)
one M65KG256AF: 256 Mbit (x16) Double Data Rate (DDR) LPSDRAM
one M65KG512AB: 512Mbit (x16) double Data Rate (DDR) LPSDRAM
Refer to Table 1: Product List, for a description of the memories contained in the NAND256-
M, NAND256-M and NAND01G-M devices.
For detailed information on how to use the SDR LPSDRAM devices, refer to the
M65KA256AL datasheet which is available from your local STMicroelectronics distributor.
For detailed information on how to use the DDR LPSDRAM device, refer to the
M65KG256AB datasheet which is available from your local STMicroelectronics distributor.
Figure 1.
Logic Diagram: NAND Flash & 1 x SDR LPSDRAM
Ai11024b
13
A0-A12
DQ0-DQ15
16
K
KE
WD
VDDQD
ED
CAS
DQM0
DQM1
VDDF
WF
VDDD
NAND256-M
NAND512-M
NAND01G-M
EF
VSSD
WP
AL
CL
RB
R
RAS
2
BA0-BA1
8/16
I/O8-I/O15, x16
I/O0-I/O7, x8/x16
VSSQD
VSSF
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