参数资料
型号: NCN6001DTBEVB
厂商: ON Semiconductor
文件页数: 15/36页
文件大小: 0K
描述: EVAL BOARD FOR NCN6001DTB
设计资源: NCN6001DTBEVB Gerber Files
NCN6001 Demo Brd Schematic
NCN6001DBEVB BOM
标准包装: 1
主要目的: 接口,智能卡
嵌入式: 是,MCU,8 位
已用 IC / 零件: NCN6001
主要属性: 与 ISO 7816-3,EMV,GIE-CB 兼容
次要属性: 符合 GSM 规定
已供物品:
其它名称: NCN6001DTBEVBOS
NCN6001
http://onsemi.com
22
Figure 16. MISO Read Out Sequences
Protocol: Special Mode
Protocol: Standard SPI
DC/DC OPERATION
The power conversion is based on a full bridge structure
capable to handle either step up or step down power supply
(Figure 17). The operation is fully automatic and, beside the
output voltage programming, does not need any further
adjustments.
Figure 17. Basic DC/DC Converter
G_Q4
G_Q2
G_Q7
G_HIZ
G_Q3
G_Q1
CMD_STOP
CMD_5.0V
CMD_3.0V
CMD_1.8V
GND
22 mH
L1
GND
11 PWR_GND
10 mF
C2
Q2
Q7
Q4
Q6
Q5
Q3
10
12
Q1
10 mF
MIXED
LOGIC/ANALOG
BLOCK
VCC
CRD_VCC
C1
13
6
In order to achieve the 250
ms max time to discharge
CRD_VCC to 400 mV called by the EMV specifications, an
active pull down NMOS is provided (Q7) to discharge the
external CRD_VCC reservoir capacitor. This timing is
guaranteed for a 10
mF maximum load reservoir capacitor
value (Figure 5).
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