参数资料
型号: NCN6001DTBEVB
厂商: ON Semiconductor
文件页数: 17/36页
文件大小: 0K
描述: EVAL BOARD FOR NCN6001DTB
设计资源: NCN6001DTBEVB Gerber Files
NCN6001 Demo Brd Schematic
NCN6001DBEVB BOM
标准包装: 1
主要目的: 接口,智能卡
嵌入式: 是,MCU,8 位
已用 IC / 零件: NCN6001
主要属性: 与 ISO 7816-3,EMV,GIE-CB 兼容
次要属性: 符合 GSM 规定
已供物品:
其它名称: NCN6001DTBEVBOS
NCN6001
http://onsemi.com
24
Table 9. CERAMIC/ELECTROLYTIC CAPACITORS COMPARISON
Manufacturers
Type/Series
Format
Max Value
Tolerance
Typ. Z @ 500 kHz
MURATA
CERAMIC/GRM225
0805
10 mF/6.3 V
20%/+20%
30 mW
MURATA
CERAMIC/GRM225
0805
4.7 mF/6.3 V
20%/+20%
30 mW
VISHAY
Tantalum/594C/593C
10 mF/16 V
450 mW
VISHAY
Electrolytic/94SV
10 mF/10 V
20%/+20%
400 mW
Electrolytic Low Cost
10 mF/10 V
35%/+50%
2.0 W
The DC/DC converter is capable to start with a full load
connected to the CRD_VCC output as depicted in Figure 20.
In this example, the converter is fully loaded when the
system starts from zero.
Figure 19. Typical CRD_VCC Ripple Voltage
Test Conditions: Cout = 2x 4.7 mF/6 V/ceramic X7R,
Temp = +25C
Iout = Maximum Specification
Figure 20. Output Voltage Startup Under Full Load
Conditions
58
60
62
64
66
68
70
72
74
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Ef
f(%)
Figure 21. CRD_VCC Efficiency as a Function of the
Input Supply Voltage
Vbat (V)
Lout = 22 mH/ESR = 2 W
Vout = 3.0 V
Vout = 5.0 V
Vout = 1.8 V
The curves illustrate the typical behavior under full output
current load (35 mA, 60 mA and 65 mA), according to EMV
specifications.
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