参数资料
型号: NCV7240DPR2G
厂商: ON Semiconductor
文件页数: 5/26页
文件大小: 0K
描述: IC DVR RELAY 8CH LOW SIDE 24SSOP
标准包装: 2,500
系列: *
NCV7240
MAXIMUM RATINGS
Parameter
Supply Input Voltage (VDDA, VDD)
DC
Digital I/O pin voltage
(EN, LHI, Inx, CSB, SCLK, SI)
(SO)
High Voltage Pins (OUTx)
DC
Peak Transient
Output Current (OUTx)
Clamping Energy
Maximum (single pulse)
Repetitive (multiple pulse) (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
ESD Capability,
Human body model (100 pF, 1.5 k W ) (OUTx pins)
Human body model (100 pF, 1.5 k W ) (all other pins)
ESD Capability
Machine Model (200 pF)
Min
?0.3
?0.3
?0.3
?0.3
?1
?
?
?40
?55
?4000
?2000
?200
Max
5.5
5.5
V DD + 0.3
36
44 (Note 1)
1.3
75
?
150
150
4000
2000
200
Unit
V
V
V
A
m J
° C
° C
V
V
AECQ10x?12?RevA
Short Circuit Reliability Characterization
PACKAGE
Grade A
?
Moisture Sensitivity Level
Lead Temperature Soldering: SMD style only, Reflow (Note 3)
Pb?Free Part 60 ? 150 sec above 217 ° C, 40 sec max at peak
Package Thermal Resistance (per JESD51)
SSOP?24
Junction?to?Ambient (1s0p + 600 mm 2 Cu) (Note 4)
Junction?to?Ambient (2s2p) (Notes 4 and 5)
Junction?to?Pin (pins 1, 2, 11, 12) (Note 6)
MSL2
265 peak
68
62
30
?
° C
° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Internally limited. Specification applies to unpowered and powered modes. (0 V to VDDA, 0 V to VDD)
2. Testing particulars, 2M pulses, V bat = 15 V, 63 W , 390 mH, T A = 25 ° C. (See Figure 4)
3. For additional information, see or download ON Semiconductor ’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
and Application Note AND8083/D.
4. 76 mm x 76 mm x 1.5 mm FR4 PCB with additional heat spreading copper (2 oz) of 600 mm 2 , LS1 to LS8 dissipating 100 mW each. No
vias.
5. Include 2 inner 1 oz copper layers. No vias.
6. One output dissipating 100 mW.
Figure 4. Repetitive Clamping Energy Test
http://onsemi.com
5
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