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参数资料
| 型号： | NCV7513BFTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 14/23页 |
| 文件大小： | 0K |
| 描述： | IC PREDRIVER HEX LOW SIDE 32LQFP |
| 标准包装： | 2,000 |
| 系列： | * |
NCV7513B
The GAT X state truth table is given in Table 7.
Table 7. Gate Driver Truth Table
POR ENA1 ENA2 SHRT X IN X G X
0 X X X X X
GAT X
L
On ? state faults will initiate MOSFET protection
behavior, set the FLTB flag and the respective channel’s D X
bits in the device’s fault latches. Off ? state faults will
simply set the FLTB flag and the channel’s D X bits.
Fault types are uniquely encoded in a 2 ? bit per channel
1
1
1
1
0
0
1
1
0
1
0
1
X
X
X
1
X
X
X
0
X
X
X
0
L
L
L
L
format. Fault information for all channels simultaneously
is retrieved by SPI read (Figure 11). Table 8 shows the
fault ? encoding scheme for channel 0. The remaining
channels are identically encoded.
1
1
1
1
1
1
1
1
1
1 → 0
1
1
1
1
1
1
1 → 0
0 → 1
1
1
0
X
X
X
1
X
X
X
X
0
X
1
X
→ 0
G X
G X
H
H
L
→ L
→ L
→ G X
Table 8. Fault Data Encoding
CHANNEL 0
D 1 D 0
0 0
0 1
1 0
1 1
STATUS
NO FAULT
OPEN LOAD
SHORT TO GND
SHORTED LOAD
Gate Drivers
D X0
50
TIMER
D X1
t FR
R 2 | R 5
SHRT X
_
M X
EN
IN X
G X
ENA2
The non ? inverting GAT X drivers are symmetrical
resistive switches (1.80 k W typ.) to the V CC2 and V SS
voltages. While the outputs are designed to provide
symmetrical gate drive to an external MOSFET, load
current switching symmetry is dependent on the
characteristics of the external MOSFET and its load.
Figure 12 shows the gate driver block diagram.
FILTER
ENCODING FAULT
LOGIC DETECTION
BLANKING DRN X
TIMER
S V SS
LATCH OFF /
AUTO RE ? TRY
VCC2
R
1800
DRIVER
ENA1 GAT X
V SS
POR
Figure 12. Gate Driver Channel
Fault Diagnostics and Behavior
Each channel has independent fault diagnostics and
employs blanking and filter timers to suppress false faults.
An external MOSFET is monitored for fault conditions by
connecting its drain to a channel’s DRN X feedback input
through an external series resistor.
When either ENA1 or ENA2 is low, diagnostics are
disabled. When both ENA1 and ENA2 are high,
diagnostics are enabled.
Shorted load (or short to V LOAD ) faults can be detected
when a driver is on. Open load or short to GND faults can
Blanking and Filter Timers
Blanking timers are used to allow drain feedback to
stabilize after a channel is commanded to change states.
Filter timers are used to suppress glitches while a channel
is in a stable state.
A turn ? on blanking timer is started when a channel is
commanded on. Drain feedback is sampled after t BL(ON) .
A turn ? off blanking timer is started when a channel is
commanded off. Drain feedback is sampled after t BL(OFF) .
A filter timer is started when a channel is in a stable state
and a fault detection threshold associated with that state has
been crossed. Drain feedback is sampled after t FF .
Blanking timers for all channels are started when both
ENA1 and ENA2 go high or when either ENA X goes high
while the other is high. The blanking time for each channel
depends on the commanded state when ENA X goes high.
While each channel has independent blanking and filter
timers, the parameters for the t BL(ON) , t BL(OFF) , and t FF
times are the same for all channels.
Shorted Load Detection
An external reference voltage applied to the FLTREF
input serves as a common reference for all channels
(Figure 13). The FLTREF voltage must be within the range
of 0 to V CC1 ? 2.0 V and can be derived via a voltage divider
between V CC1 and GND.
Shorted load detection thresholds can be programmed
via SPI in four 25% increments that are ratiometric to the
applied FLTREF voltage. Separate thresholds can be
selected for channels 0 ? 2 and for channels 3 ? 5 (Table 4).
be detected when a driver is off.
http://onsemi.com
14
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| NCV7513FTG | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7513FTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FLEXMOS Hex Low-Side MOSFET Pre-Driver |
| NCV7517BFTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517FTG | 功能描述:功率驱动器IC HEX LO-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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