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参数资料
| 型号： | NCV7513BFTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 22/23页 |
| 文件大小： | 0K |
| 描述： | IC PREDRIVER HEX LOW SIDE 32LQFP |
| 标准包装： | 2,000 |
| 系列： | * |
NCV7513B
APPLICATION GUIDELINES
General
Unused DRN X inputs should be connected to V CC1 to
prevent false open load faults. Unused parallel inputs
should be connected to GND and unused enable inputs
should be connected to V CC1 . The mask bit for each unused
channel should be ‘set’ (see Table 5) to prevent activation
clamp power is limited to the maximum allowable junction
temperature.
To limit power in the DRN X input clamps and to ensure
proper open load or short to GND detection, the R DX
resistor must be dimensioned according to the following
constraint equations:
of the flags and the user ’s software should be designed to
ignore fault information for unused channels. For best
shorted ? load detection accuracy, the external MOSFET
RDX(MIN) +
VPK ? VCL(MIN)
ICL(MAX)
(eq. 2)
VSG ? |VOS|
RDX(MAX) +
|ISG|
ROL w LOAD
V ? VOL
* RDX
VLOAD ? VSG ) |ISG|(RDX ) RLOAD)
source terminals should be star ? connected and the
NCV7513B’s GND pin, and the lower resistor in the fault
reference voltage divider should be Kelvin connected to
the star (see Figures 2 and 13).
Consideration of auto ? retry fault recovery behavior is
necessary from a power dissipation viewpoint (for both the
NCV7513B and the MOSFETs) and also from an EMI
viewpoint.
Driver slew rate and turn ? on/off symmetry can be
adjusted externally to the NCV7513B in each channel’s
gate circuit by the use of series resistors for slew control,
or resistors and diodes for symmetry. Any benefit of EMI
reduction by this method comes at the expense of increased
switching losses in the MOSFETs.
The channel fault blanking timers must be considered
when choosing external components (MOSFETs, slew
control resistors, etc.) to avoid false faults. Component
choices must ensure that gate circuit charge/discharge
times stay within the turn ? on/turn ? off blanking times.
The NCV7513B does not have integral drain ? gate
flyback clamps. Clamp MOSFETs, such as
ON Semiconductor ’s NID9N05CL, are recommended
when driving unclamped inductive loads. This flexibility
allows choice of MOSFET clamp voltages suitable to each
application.
DRN X Feedback Resistor
Each DRN X feedback input has a clamp to keep the
applied voltage below the breakdown voltage of the
NCV7513B. An external series resistor (R DX ) is required
between each DRN X input and MOSFET drain. Channels
may be clamped sequentially or simultaneously but total
(eq. 3)
where V PK is the peak transient drain voltage, V CL is the
DRN X input clamp voltage, I CL(MAX) is the input clamp
current, and V SG and I SG are the respective short to GND
fault detection voltage and diagnostic current, and V OS is
the allowable offset (1.0 V max) between the NCV7513B’s
GND and the short.
Once R DX is chosen, the open load and short to GND
detection resistances in the application can be predicted:
(eq. 4)
IOL
RLOAD(VSG " VOS ? |ISG|RDX) (eq. 5)
RSG v
Using the data sheet values for V CL(MIN) = 27 V,
I CL(MAX) = 10 mA, and choosing V PK = 55 V as an
example, Equation 2 evaluates to 2.8 k W minimum.
Choosing V CC1 = 5.0 V and using the typical data sheet
values for V SG = 30%V CC1 , I SG = 20 m A, and choosing
V OS = 0, Equation 3 evaluates to 75 k W maximum.
Selecting R DX = 6.8 k W " 5%, V CC1 = 5.0 V, V LOAD =
12.0 V, V OS = 0 V, R LOAD = 555 W , and using the typical
data sheet values for V OL , I OL , V SG , and I SG , Equation 4
predicts an open load detection resistance of 130.7 k W and
Equation 5 predicts a short to GND detection resistance of
71.1 W . When R DX and the data sheet values are taken to
their extremes, the open load detection range is 94.1 k W v
R OL v 273.5 k W , and the short to GND detection range is
59.2 W v R SG v 84.4 W .
http://onsemi.com
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| NCV7513FTG | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7513FTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FLEXMOS Hex Low-Side MOSFET Pre-Driver |
| NCV7517BFTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517FTG | 功能描述:功率驱动器IC HEX LO-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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