- 您现在的位置：买卖IC网 > Datasheet目录346 > NCV7513BFTR2G (ON Semiconductor)IC PREDRIVER HEX LOW SIDE 32LQFP Datasheet资料下载
参数资料
| 型号： | NCV7513BFTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/23页 |
| 文件大小： | 0K |
| 描述： | IC PREDRIVER HEX LOW SIDE 32LQFP |
| 标准包装： | 2,000 |
| 系列： | * |
NCV7513B
ELECTRICAL CHARACTERISTICS (4.75 V v V CCX v 5.25 V, V DD = V CCX , ? 40 ° C v T J v 125 ° C, unless otherwise specified.) (Note 4)
Characteristic
Symbol
Conditions
Min
Typ
Max
Unit
V CC1 Supply
Operating Current –
V CC1 = 5.25 V, V FLTREF = 1.0 V
Power ? On Reset Threshold
Power ? On Reset Hysteresis
ENA X = 0
ENA 1 = ENA 2 = V CC1 ,
V DRNX = 0 V, GAT X drivers off
ENA 1 = ENA 2 = V CC1 ,
GAT X drivers on
V CC1 Rising
?
–
–
–
3.65
0.150
2.80
3.10
2.80
4.20
0.385
5.0
5.0
5.0
4.60
–
mA
V
V
Digital I/O
V IN High
V IN Low
V IN Hysteresis
Input Pullup Current
Input Pulldown Current
Input Pulldown Resistance
SO Low Voltage
SO High Voltage
SO Output Resistance
SO Tri ? State Leakage Current
STAB Low Voltage
STAB Leakage Current
FLTB Low Voltage
FLTB Leakage Current
ENA X , IN X , SI, SCLK, CSB
ENA X , IN X , SI, SCLK, CSB
ENA X , IN X , SI, SCLK, CSB
CSB V IN = 0 V
ENA2, IN X , SI, SCLK,
V IN = V CC1
ENA1
V DD = 3.3 V, I SINK = 5.0 mA
V DD = 3.3 V, I SOURCE = 5.0 mA
Output High or Low
CSB = 3.3 V
STAB Active, I STAB = 1.25 mA
V STAB = V CC1
FLTB Active, I FLTB = 1.25 mA
V FLTB = V CC1
2.0
–
100
? 25
–
100
–
V DD ?
0.25
–
? 10
–
–
–
–
–
–
330
? 10
10
150
0.11
V DD ?
0.11
22
–
0.1
–
0.1
–
–
0.8
500
–
25
200
0.25
–
–
10
0.25
10
0.25
10
V
V
mV
m A
m A
k W
V
V
W
m A
V
m A
V
m A
Fault Detection – GAT X ON
FLTREF Input Current
FLTREF Input Linear Range
FLTREF Op ? amp V CC1 PSRR
V FLTREF = 0 V
(Note 5)
(Note 5)
? 1.0
0
30
–
–
–
–
V CC1 ?
2.0
–
m A
V
dB
DRN X Clamp Voltage
DRN X Shorted Load Threshold
GAT X Output High
V FLTREF = 1.0 V
DRN X Input Leakage Current
V CL
I DRNX = 10 m A
I DRNX = I CL(MAX) = 10 mA
Register 2: R 1 = 0, R 0 = 0 or
R 4 = 0, R 3 = 0
Register 2: R 1 = 0, R 0 = 1 or
R 4 = 0, R 3 = 1
Register 2: R 1 = 1, R 0 = 0 or
R 4 = 1, R 3 = 0
Register 2: R 1 = 1, R 0 = 1 or
R 4 = 1, R 3 = 1
V CC1 = V CC2 = V DD = 5.0 V,
ENA X = IN X = 0 V,
V DRNX = V CL(MIN)
V CC1 = V CC2 = V DD = 0 V,
ENA X = IN X = 0 V,
V DRNX = V CL(MIN)
27
–
20
45
70
95
? 1.0
34
42
25
50
75
100
–
–
47
30
55
80
105
1.0
V
%
V FLTREF
%
V FLTREF
%
V FLTREF
%
V FLTREF
m A
4. Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%
parametrically tested in production.
5. Guaranteed by design.
http://onsemi.com
6
相关PDF资料 |
PDF描述 |
|---|---|
| NCV7513FTG | IC PREDRIVER HEX LOSIDE 32-LQFP |
| NCV7517BFTR2G | IC PREDRIVER HEX LOW SIDE 32LQFP |
| NCV8855BMNR2GEVB | BOARD EVALUATION NCV8855 ASIC |
| NCV8871BSTGEVB | BOARD EVAL NCV8871BST BOOST CTLR |
| NHC-14150 | VALULINE 8" X 8.5" X 1.75" |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV7513FTG | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7513FTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FLEXMOS Hex Low-Side MOSFET Pre-Driver |
| NCV7517BFTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517FTG | 功能描述:功率驱动器IC HEX LO-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。