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参数资料
| 型号： | NCV7513BFTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 15/23页 |
| 文件大小： | 0K |
| 描述： | IC PREDRIVER HEX LOW SIDE 32LQFP |
| 标准包装： | 2,000 |
| 系列： | * |
NCV7513B
A shorted load fault is detected when a channel’s DRN X
feedback is greater than its selected fault reference after
either the turn ? on blanking or the filter has timed out.
Fault Recovery Refresh Time
Refresh time for shorted load faults is SPI programmable
to one of two values for channels 0 ? 2 (register bit R2) and
for channels 3 ? 5 (register bit R5) via the Refresh and
VCC1
RX 1
RX 2
KELVIN
FLTREF
0 ? 3V
VCC1
+
OA
?
75%
50%
R
R
3
2
1
0
CHANNELS 0 ? 2
2X4
DECODER
R1 R0
REGISTER 2
BITS
Reference register (Table 4).
A global refresh timer with taps at nominally 10 ms and
40 ms is used for auto ? retry timing. The first faulted
channel triggers the timer and the full refresh period is
guaranteed for that channel. An additional faulted channel
may initially retry immediately after its turn ? on blanking
25%
R
R
R4
R3
time, but subsequent retries will have the full refresh time
period.
3
2
1
0
2X4
DECODER
CHANNELS 3 ? 5
If all channels in a group (e.g. channels 0 ? 2) become
faulted, they will become synchronized to the selected
refresh period for that group. If all channels become faulted
Figure 13. Shorted Load Reference Generator
Shorted Load Fault Recovery
Shorted load fault disable mode for each channel is
individually SPI programmable via the M X bits in the
device’s Disable Mode register (Table 3).
When latch ? off mode is selected the corresponding
GAT X output is turned off upon detection of a fault. Fault
recovery is initiated by toggling (ON → OFF → ON) the
channel’s respective IN X parallel input, serial G X bit, or
ENA2.
When auto ? retry mode is selected (default mode) the
corresponding GAT X output is turned off for the duration
of the programmed fault refresh time (t FR ) upon detection
of a fault. The output is automatically turned back on (if
still commanded on) when the refresh time ends. The
channel’s DRN X feedback is resampled after the turn ? on
blanking time. The output will automatically be turned off
and are set for the same refresh time, all will become
synchronized to the refresh period.
Open Load and Short to GND Detection
A window comparator with fixed references
proportional to V CC1 along with a pair of bias currents is
used to detect open load or short to GND faults when a
channel is off. Each channel’s DRN X feedback is compared
to the references after either the turn ? off blanking or the
filter has timed out. Figure 14 shows the DRN X bias and
fault detection zones. The diagnostics are disabled and the
bias currents are turned off when ENA X is low.
No fault is detected if the feedback voltage at DRN X is
greater than the V OL open load reference. If the feedback
is less than the V SG short to GND reference, a short to GND
fault is detected. If the feedback is less than V OL and
greater than V SG , an open load fault is detected.
I DRNX
if a fault is again detected. This behavior will continue for
as long as the channel is commanded on and the fault
persists.
I OL
Short to
GND
Open
Load
No
Fault
In either mode, a fault may exist at turn ? on or may occur
some time afterward. To be detected, the fault must exist
longer than either t BL(ON) at turn ? on or longer than t FF
some time after turn ? on. The length of time that a
MOSFET stays on during a shorted load fault is thus limited
0
to either t BL(ON) or t FF .
In auto ? retry mode, a persistent shorted load fault will
result in a low duty cycle (t FD [ t BL(ON) /t FR ) for the
affected channel and help prevent thermal failure of the
? I SG
V SG
V CTR
V OL
V DRNX
channel’s MOSFET.
CAUTION ? CONTINUOUS INPUT TOGGLING VIA
IN X , G X or ENA2 WILL OVERRIDE EITHER DISABLE
MODE. Care should be taken to service a shorted load fault
quickly when one has been detected.
Figure 14. DRN X Bias and Fault Detection Zones
Figure 15 shows the simplified detection circuitry. Bias
currents I SG and I OL are applied to a bridge along with bias
voltage V CTR (50% V CC1 typ.).
http://onsemi.com
15
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| NCV7513FTG | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7513FTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FLEXMOS Hex Low-Side MOSFET Pre-Driver |
| NCV7517BFTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517FTG | 功能描述:功率驱动器IC HEX LO-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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