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参数资料
| 型号： | NCV7513BFTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/23页 |
| 文件大小： | 0K |
| 描述： | IC PREDRIVER HEX LOW SIDE 32LQFP |
| 标准包装： | 2,000 |
| 系列： | * |
NCV7513B
MAXIMUM RATINGS (Voltages are with respect to device substrate.)
Rating
DC Supply (V CC1 , V CC2 , V DD )
Difference Between V CC1 and V CC2
Difference Between GND (Substrate) and V SS
Output Voltage (Any Output)
Drain Feedback Clamp Voltage (Note 1)
Drain Feedback Clamp Current (Note 1)
Input Voltage (Any Input)
Junction Temperature, T J
Storage Temperature, T STG
Peak Reflow Soldering Temperature: Lead ? Free
60 to 150 seconds at 217 ° C (Note 2)
Value
? 0.3 to 6.5
" 0.3
" 0.3
? 0.3 to 6.5
? 0.3 to 47
10
? 0.3 to 6.5
? 40 to 150
? 65 to 150
260 peak
Unit
V
V
V
V
V
mA
V
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ATTRIBUTES
ESD Capability
Human Body Model
Machine Model
Moisture Sensitivity (Note 2)
Package Thermal Resistance (Note 3)
Junction–to–Ambient, R q JA
Junction–to–Pin, R Y JL
Characteristic
Value
w " 2.0 kV
w " 200 V
MSL3
86.0 ° C/W
58.5 ° C/W
1. An external series resistor must be connected between the MOSFET drain and the feedback input in the application. Total clamp power
dissipation is limited by the maximum junction temperature, the application environment temperature, and the package thermal resistances.
2. For additional information, see or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D, and
Application Note AND8003/D.
3. Values represent still air steady ? state thermal performance on a 4 layer (42 x 42 x 1.5 mm) PCB with 1 oz. copper on an FR4 substrate, using
a minimum width signal trace pattern (384 mm 2 trace area).
RECOMMENDED OPERATING CONDITIONS
Symbol
V CC1
V CC2
V DD
V IN High
V IN Low
T A
Parameter
Main Power Supply Voltage
Gate Drivers Power Supply Voltage
Serial Output Driver Power Supply Voltage
Logic High Input Voltage
Logic Low Input Voltage
Ambient Still ? Air Operating Temperature
Min
4.75
V CC1 ? 0.3
3.0
2.0
0
? 40
Max
5.25
V CC1 + 0.3
V CC1
V CC1
0.8
125
Unit
V
V
V
V
V
° C
http://onsemi.com
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| NCV7513FTG | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7513FTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FLEXMOS Hex Low-Side MOSFET Pre-Driver |
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| NCV7517FTG | 功能描述:功率驱动器IC HEX LO-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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