参数资料
| 型号： | NCV8401DTRKG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOSIDE 33A 42V DPAK |
| 标准包装： | 2,500 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 23 毫欧 |
| 电流 - 输出 / 通道： | 35A |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
| 其它名称： | NCV8401DTRKG-ND NCV8401DTRKGOSTR |
NCV8401, NCV8401A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8401/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
http://onsemi.com
This device offers protection and is suitable for harsh automotive
environments.
V DSS
(Clamped)
R DS(ON) TYP
I D MAX
(Limited)
Protection
Features
? Short Circuit Protection
? Thermal Shutdown with Automatic Restart
? Over Voltage Protection
? Integrated Clamp for Inductive Switching
? ESD Protection
? dV/dt Robustness
? Analog Drive Capability (Logic Level Input)
? NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q100
42 V 23 m W @ 10 V 33 A*
*Max current may be limited below this value
depending on input conditions.
Drain
Overvoltage
Gate
Input
ESD Protection
?
Qualified and PPAP Capable
These Devices are Pb ? Free and are RoHS Compliant
Temperature
Limit
Current
Limit
Current
Sense
Typical Applications
? Switch a Variety of Resistive, Inductive and Capacitive Loads
? Can Replace Electromechanical Relays and Discrete Circuits
? Automotive / Industrial
Source
MARKING
DIAGRAM
DPAK
CASE 369C
STYLE 2
1
3
2
YWW
NCV
xxxxxG
Y
WW
xxxxx
G
= Year
= Work Week
= 8401 or 8401A
= Pb ? Free Package
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
NCV8401DTRKG
NCV8401ADTRKG
Package
DPAK
(Pb ? Free)
DPAK
Shipping ?
2500/Tape & Reel
2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
July, 2012 ? Rev. 10
1
Publication Order Number:
NCV8401/D
相关PDF资料 |
PDF描述 |
|---|---|
| NCV8402ADDR2G | IC DVR LOW SIDE 8-SOIC |
| NCV8402ASTT1G | IC DVR LO SIDE 42V 2.0A SOT223-4 |
| NCV8402STT1G | IC DVR LOW SIDE SOT-223-4 |
| NCV8403ASTT1G | IC DVR LOW SIDE SOT-223-4 |
| NCV8403STT1G | IC DRIVER LOW SIDE SOT-223-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8402 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit |
| NCV8402A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit |
| NCV8402ADDR2G | 功能描述:MOSFET 42V 2.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402ASTT1G | 功能描述:MOSFET 42V 2.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402ASTT3G | 功能描述:MOSFET 42V 2.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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