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参数资料
| 型号： | NCV8406STT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER LOW SIDE SOT-223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8406, NCV8406A
Self-Protected Low Side
Driver with Temperature
and Current Limit
65 V, 7.0 A, Single N ? Channel
NCV8406/A is a three terminal protected Low-Side Smart Discrete
http://onsemi.com
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
V DSS
(Clamped)
65 V
R DS(on) TYP
210 m W
I D TYP
(Limited)
7.0 A
Features
? Short Circuit Protection
? Thermal Shutdown with Automatic Restart
? Over Voltage Protection
? Integrated Clamp for Inductive Switching
? ESD Protection
? dV/dt Robustness
? Analog Drive Capability (Logic Level Input)
? These Devices are Faster than the Rest of the NCV Devices
? AEC ? Q101 Qualified and PPAP Capable
? NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
? These Devices are Pb ? Free and are RoHS Compliant
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit Limit Sense
Drain
Source
MARKING
2
Typical Applications
? Switch a Variety of Resistive, Inductive and Capacitive Loads
? Can Replace Electromechanical Relays and Discrete Circuits
? Automotive / Industrial
4
1
3
SOT ? 223
CASE 318E
STYLE 3
4
1 2
3
DPAK
1 2 3
DIAGRAM
DRAIN
4
AYW
xxxxx G
G
GATE SOURCE
DRAIN
YWW
xxxxxG
CASE 369C
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8406 or 8406A
G or G
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
November, 2011 ? Rev. 2
1
Publication Order Number:
NCV8406/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8408-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit |
| NCV8408DTRKG | 功能描述:MOSFET 42V 8A FULLY PROTECTED LO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8440 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection |
| NCV8440ASTT1G | 功能描述:MOSFET 2.6A, 52V N-CH, CLAM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8440ASTT3G | 功能描述:MOSFET N-CH 2.6A 52V SOT-223-4 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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