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参数资料
| 型号： | NCV8406STT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER LOW SIDE SOT-223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8406, NCV8406A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage Internally Clamped
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
70
" 14
Unit
Vdc
Vdc
Drain Current
Continuous
I D
Internally Limited
Total Power Dissipation ? SOT ? 223 Version
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
Total Power Dissipation ? DPAK Version
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
Thermal Resistance ? SOT ? 223 Version
Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
Thermal Resistance ? DPAK Version
Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
Single Pulse Inductive Load Switching Energy
(Starting T J = 25 ° C, V DD = 50 Vdc, V GS = 5.0 Vdc,
I L = 2.1 Apk, L = 50 mH, R G = 25 W )
Load Dump Voltage (V GS = 0 and 10 V, R I = 2 W , R L = 7 W , t d = 400 ms)
Operating Junction Temperature Range
Storage Temperature Range
P D
P D
R q JC
R q JA
R q JA
R q JC
R q JA
R q JA
E AS
V LD
T J
T stg
1.25
1.81
1.31
2.31
7.0
100
69
1.0
95
54
110
75
? 40 to 150
? 55 to 150
W
W
° C/W
° C/W
mJ
V
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1 ″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
http://onsemi.com
2
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