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参数资料
| 型号： | NCV8406STT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER LOW SIDE SOT-223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8406, NCV8406A
TYPICAL PERFORMANCE CURVES
1.2
1100
1.1
1.0
I D = 150 m A
V DS = V GS
1000
900
? 40 ° C
25 ° C
0.9
800
0.8
0.7
700
600
100 ° C
150 ° C
0.6
? 40 ? 20
0
20
40
60
80
100
120 140
500
1
2
3
4
5
6
7
V GS = 0 V
8 9
10
T ( ° C)
Figure 14. Normalized Threshold Voltage vs.
Temperature
I S (A)
Figure 15. Source ? Drain Diode Forward
Characteristics
1600
1400
1200
1000
V DD = 13.8 V
I D = 2 A
R G = 0 W
t d(off)
3400
3000
2600
2200
t d(off) , V GS = 10 V
t r , V GS = 5 V
t d(off) , V GS = 5 V
800
600
400
200
0
3
4
5
6
7
8
9
t f
t r
t d(on)
10
1800
1400
1000
600
200
? 200
0
500
1000
t f , V GS = 10 V
t f , V GS = 5 V
t r , V GS = 10 V
t d(on) , V GS = 5 V
t d(on) , V GS = 10 V
1500 2000
V GS (V)
Figure 16. Resistive Load Switching Time vs.
Gate ? Source Voltage
35
30
R G ( W )
Figure 17. Resistive Load Switching Time vs.
Gate Resistance
25
20
15
10
dV DS /d t(off) , V GS = 5 V
dV DS /d t(off) , V GS = 10 V
5
0
500
1000
1500
2000
R G ( W )
Figure 18. Drain ? Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
http://onsemi.com
6
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