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| 型号： | NDB6060 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 48A TO-263AB |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 48A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 24A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 100W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
| 其它名称： | NDB6060TR |
March 1996
NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
Features
48A, 60V. R DS(ON) = 0.025 ? @ V GS =10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R DS(ON) .
TO-220 and TO-263 (D 2 PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
V DGR
V GSS
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R GS < 1 M ? )
Gate-Source Voltage - Continuous
NDP6060
60
60
± 20
NDB6060
Units
V
V
V
- Nonrepetitive (t P < 50 μs)
± 40
I D
Drain Current
- Continuous
T c =25 o C
48
A
T C =100 C
- Continuous
- Pulsed
o
32
144
P D
T J ,T STG
T L
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
100
0.67
-65 to 175
275
W
W/ ° C
°C
°C
1/8" from case for 5 seconds
? 1997 Fairchild Semiconductor Corporation
NDP6060 Rev. B1 / NDB6060 Rev. C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDB6060L | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDB6060L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK |
| NDB6060L_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDB608A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB608AE | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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