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参数资料
| 型号： | NE34018-T1 |
| 厂商： | CEL |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | HJ-FET 2GHZ SOT-343 |
| 标准包装： | 3,000 |
| 晶体管类型： | HFET |
| 频率： | 2GHz |
| 增益： | 16dB |
| 电压 - 测试： | 2V |
| 额定电流： | 120mA |
| 噪音数据： | 0.6dB |
| 电流 - 测试： | 5mA |
| 功率 - 输出： | 12dBm |
| 电压 - 额定： | 4V |
| 封装/外壳： | SC-82A，SOT-343 |
| 供应商设备封装： | SOT-343 |
| 包装： | 带卷 (TR) |
| 其它名称： | NE34018-T1TR NE34018-TR NE34018TR |
GaAs HJ-FET L TO S BAND
LOW NOISE AMPLIFIER
(New Plastic Package)
NE34018
FEATURES
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
? LOW COST MINIATURE PLASTIC PACKAGE
(SOT-343)
? LOW NOISE FIGURE:
0.6 dB typical at 2 GHz
4
3
V DS = 3 V, I DS = 20 mA
G A
25
20
15
? HIGH ASSOCIATED GAIN:
16.0 dB typical at 2 GHz
10
? L G = 0.6 μ m, W G = 400 μ m
? TAPE & REEL PACKAGING
DESCRIPTION
NEC's NE34018 is a low cost gallium arsenide Hetero-Junc-
2
1
NF
5
0
tion FET housed in a miniature (SOT-343) plastic surface
mount package. The device is fabricated using ion implanta-
tion for improved RF and DC performance, reliability, and
0
0.5
1 2 3 4
Frequency, f (GHz)
5 6 7 8 910
uniformity. Its low noise figure, high gain, small size and
weight make it an ideal low noise amplifier transistor in the 1-
3 GHz frequency range. The NE34018 is suitable for GPS,
PCS, WLAN, MMDS, and other commercial applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
PART NUMBER
PACKAGE OUTLINE
18 Package
SOT-343 Style
NE34018
18
SYMBOL
NF
G A
PARAMETERS AND CONDITIONS
Noise Figure at V DS = 2 V, I D = 5 mA, f = 2 GHz
Associated Gain at V DS = 2 V, I D = 5 mA, f = 2 GHz
UNITS
dB
dB
MIN
14.0
TYP
0.6
16.0
MAX
1.0
P 1dB
Output Power at 1 dB Gain Compression Point, f = 2 GHz
G 1dB
O/P I P3
V DS = 2 V, I DS = 10 mA
V DS = 3 V, I DS = 30 mA
Gain at P 1dB , f = 2 GHz
V DS = 2 V, I DS = 10 mA
V DS = 3 V, I DS = 30 mA
Output I P3 at f = 2 GHz, ? f = 1 MHz
V DS = 2 V, I DS = 10 mA
V DS = 2 V, I DS = 30 mA
dBm
dBm
dB
dB
dBm
dBm
12
16.5
17.0
17.5
23
32
I DSS
V P
g m
I GSO
R TH(CH-A)
Saturated Drain Current at V DS = 2 V, V GS = 0 V
Pinch Off Voltage at V DS = 2 V, I D = 100 μ A
Transconductance at V DS = 2 V, I D = 5 mA
Gate to Source Leakage Current at V GS = -3 V
Thermal Resistance (Channel to Ambient)
mA
V
mS
μ A
? C/W
30
-2.0
30
80
-0.8
0.5
833
120
-0.2
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE34018-T1-64 | 功能描述:MOSFET L-S Band Lo No Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NE34018-T1-64-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE34018-T1-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE34018-T2 | 制造商:NEC 制造商全称:NEC 功能描述:L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE34018-TI-63-A | 制造商:CEL 制造商全称:CEL 功能描述:GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
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