- 您现在的位置：买卖IC网 > Datasheet目录96 > NE350184C (CEL)HJ-FET 20GHZ MICRO-X Datasheet资料下载
参数资料
| 型号： | NE350184C |
| 厂商： | CEL |
| 文件页数： | 8/8页 |
| 文件大小： | 263K |
| 描述： | HJ-FET 20GHZ MICRO-X |
| 标准包装： | 1 |
| 晶体管类型： | HFET |
| 频率： | 20GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 2V |
| 额定电流： | 70mA |
| 噪音数据： | 0.7dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | 微型-X 陶瓷 84C |
| 供应商设备封装： | 84C |
| 包装： | 散装 |
| 其它名称： | Q2712397 |
4590 Patrick Henry Drive
Santa Clara,
CA
95054-1817
Telephone: (408)
919-2500
Facsimile: (408)
988-
0279
Subject:
Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on
Use of Hazardous
Substances in electrical and electronic equipment
(RoHS) an
d the requirements of EU Directive
2003/11/EC Restriction on
Penta and Octa BDE.
CEL Pb-free
products ha
ve the same
base part n
umber with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used
to designa
te devices containing Pb
which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status
is based on
CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of
the date of
disclosure of
this inform
ation.
Restricted
S
ubstance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
< 1000 PPM
Not Detected
(*)
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
<
1000 PPM
Not Detected
PBDE
<
1000 PPM
Not Detected
If you should have any additional questions regarding our devices and compliance to
environme
ntal
standards, please do not
hesitate to
contact your local representative.
Important Information and Disclaimer: Information provided by
CEL on its website or in
other communi
cations concerting
the subs
tance
content of its products represents knowledge
and b
elief as of the date that it is provided. CEL bases its knowledge and
belief
on information
provided by
t
hird parties and makes no representation or warranty
a
s
to the accuracy
of such information. Efforts are
underway
to b
etter
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may
not h
ave conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary,
and thus CAS numbers and
other limited information ma
y not be available for
release.
In no event shall CEL’s liability
ari
sing out of such information exceed
the total purch
ase price of the CEL part(s) at issue sold by
CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
相关PDF资料 |
PDF描述 |
|---|---|
| NE3503M04-T2-A | AMP HJ-FET 12GHZ SOT-343 |
| NE3508M04-T2-A | AMP HJ-FET 2GHZ 4-TSMM |
| NE3509M04-A | AMP HJ-FET 2GHZ 4-SMINI |
| NE3510M04-T2-A | FET RF HFET 4GHZ 2V 15MA M04 |
| NE3511S02-T1C-A | HJ-FET NCH 13.5DB S02 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NE350184C(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| NE350184C-A | 功能描述:射频GaAs晶体管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE350184C-T1 | 功能描述:射频GaAs晶体管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE350184C-T1A | 功能描述:射频GaAs晶体管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3503M04 | 制造商:CEL 制造商全称:CEL 功能描述:NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET |
发布紧急采购，3分钟左右您将得到回复。