参数资料
型号: NT2GT72U4PD0BV-3C
厂商: NANYA TECHNOLOGY CORP
元件分类: DRAM
英文描述: 256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240
封装: ROHS COMPLIANT, DIMM-240
文件页数: 9/27页
文件大小: 648K
代理商: NT2GT72U4PD0BV-3C
NT1GT72U89D0BV / NT2GT72U4PD0BV / NT4GT72U4ND0BV
NT2GT72U8PD0BV
1GB: 128M x 72 / 2GB: 256M x 72 / 4GB: 512M x 72
PC2-5300 / PC3-6400
Registered DDR2 SDRAM DIMM
REV 1.1
17
01/2009
NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VIN, VOUT
Voltage on I/O pins relative to VSS
-0.5 to 2.3
V
VDD
Voltage on VDD supply relative to VSS
-1.0 to 2.3
V
VDDQ
Voltage on VDDQ supply relative to VSS
-0.5 to 2.3
V
VDDL
Voltage on VDDL supply relative to VSS
-0.5 to 2.3
V
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is stress
rating only, and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Environmental Parameters
Symbol
Parameter
Rating
Units
Note
TOPR
Operating temperature (ambient)
See Note
3
HOPR
Operating Humidity (relative)
10 to 90
%
1
TOPR
Storage temperature
-50 to 100
°C
1
HOPR
Storage humidity (without condensation)
5 to 95
%
1
PBAR
Short Circuit Output Current
105 to 69
K Pascal
1,2
Note:
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
2. Up to 9850 ft.
3. The designer must meet the case temperature specifications for individual module components.
DC Electrical Characteristics and Operating Conditions
(TCASE = 0 °C ~ 85 °C; VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V, See AC Characteristics)
Symbol
Parameter
Min.
Typ.
Max.
Units
Notes
VDD
Supply Voltage
1.7
1.8
1.9
V
1
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
5
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
1, 5
VREF
Input Reference Voltage
0.49
VDDQ
0.5
VDDQ
0.51
VDDQ
V
2, 3
VTT
Termination Voltage
VREF – 0.04
VREF
VDDQ + 0.04
V
4
Note:
1. There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However under all conditions VDDQ must be
less than or equal to VDD.
2. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
3. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).
4. VTT of transmitting device must track VREF of receiving device.
5. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together
相关PDF资料
PDF描述
NT512T64U88B0BY-3C 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
NT56V6620C0T-75 SYNCHRONOUS DRAM, PDSO54
NT5CB256M4AN-BF DDR DRAM, PBGA78
NT5DS64M8BF-6KI DDR DRAM, PBGA60
NT5SE8M16DS-6K 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
相关代理商/技术参数
参数描述
NT2H0301F0DTL,125 功能描述:RFID应答器 RoHS:否 制造商:NXP Semiconductors 存储容量: 工作温度范围: 安装风格: 封装 / 箱体: 封装:Reel
NT2H0301F0DTP,118 制造商:NXP Semiconductors 功能描述:NT2H0301F0DTP - Tape and Reel 制造商:NXP Semiconductors 功能描述:PHANT2H0301F0DTP,118 NFC FORUM TYPE 2 TA 制造商:NXP Semiconductors 功能描述:IC SMART TAG NFC TYPE 2 8HWSON 制造商:NXP Semiconductors 功能描述:NT2H0301F0DTP/HWSON8/REEL13//
NT2H0301F0DTP,147 制造商:NXP Semiconductors 功能描述:CHIPSET
NT2H0301F0DUDV 制造商:NXP Semiconductors 功能描述:CHIPSET
NT2H0301G0DUD,005 制造商:NXP Semiconductors 功能描述:NT2H0301G0DUD/UNCASED/FOIL// - Gel-pak, waffle pack, wafer, diced wafer on film 制造商:NXP Semiconductors 功能描述:IC SMART TAG NFC TYPE 2 UNCASED