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参数资料
型号： NT512T64U88B0BY-3C
厂商： NANYA TECHNOLOGY CORP
元件分类： DRAM
英文描述： 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
封装： ROHS COMPLIANT, DIMM-240
文件页数： 24/24页
文件大小： 473K
代理商： NT512T64U88B0BY-3C
NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY
256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
REV 1.2
9
03/2007
NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Serial Presence Detect -- Part 2 of 2 (256MB)
32Mx64 1 BANK UNBUFFERED DDR2 SDRAM DIMM based on 32Mx16, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD
SPD Entry Value
Serial PD Data Entry
(Hexadecimal)
Byte
Description
-37B
-3C
-25D
-25C
-37B
-3C
-25D
-25C
Note
40
Extension of Byte 41 tRC and Byte 42 tRFC
00: The number below a decimal point
of tRC and tRFC are 0, tRFC is less
than 256ns. 30: The number below a
decimal point of tRC is 5, tRFC is less
than 256ns
00
30
41
Minimum Core Cycle Time (tRC)
60.0ns
57.5ns
3C
39
42
Min. Auto Refresh Command Cycle Time (tRFC)
105ns
69
43
Maximum Clock Cycle Time (tCK)
8.0ns
80
44
Max. DQS-DQ Skew Factor (tDQS)
0.30ns
0.20ns
1E
18
14
45
Read Data Hold Skew Factor (tQHS)
0.40ns
0.30ns
28
22
1E
46
PLL Relock Time
N/A
00
47
Tcasemax
DT4R4W Delta
95C
0C
95C
1.2C
95C
0C
50
53
50
48
Thermal Resistance of DRAM Package from Top (Case) to
Ambient (Psi-T-A DRAM)
59C/W
76
49
DRAM Case Temperature Rise from Ambient due to
Activate-Precharge/Mode Bits (DT0/Mode Bits)
7.85C
8.41C
9.42C
47
4F
5F
50
DRAM Case Temperature Rise from Ambient due to
Precharge/Quiet Standby (DT2N/DT2Q)
4.48C
5.61C
5.72C
2D
39
3A
51
DRAM Case Temperature Rise from Ambient due to
Precharge Power-Down (DT2P)
0.78C
35
52
DRAM Case Temperature Rise from Ambient due to Active
Standby (DT3N)
4.82C
5.61C
6.73C
21
26
2D
53
DRAM Case Temperature Rise from Ambient due to Active
Power-Down with Fast PDN Exit (DT3Pfast)
3.14C
3.7C
4.37C
3F
4A
58
54
DRAM Case Temperature Rise from Ambient due to Active
Power-Down with Slow PDN Exit (DT3Pslow)
1.01C
29
55
DRAM Case Temperature Rise from Ambient due to Page
Open Burst Read/DT4R4W Mode Bit (DT4R/DT4R4W
Mode Bit)
12.33C 14.57C
17.38C
3E
4A
58
56
DRAM Case Temperature Rise from Ambient due to Burst
Refresh (ST5B)
16.82C 17.94C
19.62C
22
24
28
57
DRAM Case Temperature Rise from Ambient due to Bank
interleave Reads with Auto-Precharge (DT7)
17.94C 19.06C
19.06C
24
27
58
Thermal Resistance of PLL Package from Top (Case) to
Ambient (Psi T-A PLL)
00
59
Thermal Resistance of Register Package from Top (Case)
to Ambient (Psi T-A Register)
00
60
PLL Case Temperature Rise from Ambient due to PLL
Active (DT PLL Active)
00
61
Register Case Temperature Rise from Ambient due to
Register Active/Mode Bit (DT Register Active/Mode Bit)
00
62
SPD Reversion
1.2
12
63
Checksum for byte 0-62
Checksum data
06
FA
F9
15
64-71 Manufacture’s JEDEC ID Code
NANYA
7F7F7F0B00000000
72
Module Manufacturing Location
Manufacturing Code
--
73-91 Module Part number
Module Part Number in ASCII
--
1
92-255 Reserved
Undefined
--
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