参数资料
型号: NT5TU64M16DG-3C
厂商: NANYA TECHNOLOGY CORP
元件分类: DRAM
英文描述: 64M X 16 DDR DRAM, 0.45 ns, PBGA84
封装: GREEN, BGA-84
文件页数: 12/85页
文件大小: 2622K
代理商: NT5TU64M16DG-3C
NT5TU256M4GE / NT5TU128M8GE / NT5TU64M16GG
1Gb DDR2 SDRAM
2
REV 1.0
06 / 2010
Description
The 1giga-bit (1Gb) Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM
containing 1,073,741,824 bits. It is internally configured as an octal-bank DRAM.
The 1Gb chip is organized as 32Mbit x 4 I/O x 8 bank, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device. These
synchronous devices achieve high speed double-data-rate transfer rates of up to 800 Mb/sec/pin for general appli-
cations.
The chip is designed to comply with all key DDR2 DRAM key features: (1) posted CAS with additive latency, (2) write
latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance
adjustment and (5) an
ODT (On-Die Termination) function.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are
latched at the cross point of differential clocks (CK rising and
falling). All I/Os are synchronized with a single ended
DQS or differential DQS pair in a source synchronous fashion. A 14 bit address bus for x4/x8 organized components
and A 13 bit address bus for x16 component is used to convey row, column, and bank address devices.
These devices operate with a single 1.8V ± 0.1V power supply and are available in BGA packages.
相关PDF资料
PDF描述
NTA2425E
NTA2425F
NTA2410-10
NTD2410F
NTA2425-10
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