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参数资料
| 型号： | NTD18N06L-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-252AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 18A条（丁）|对252AA |
| 文件页数： | 1/12页 |
| 文件大小： | 88K |
| 代理商： | NTD18N06L-1 |
Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 1
1
Publication Order Number:
NTD18N06L/D
NTD18N06L
Power MOSFET
18 Amps, 60 Volts, Logic Level
N–Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 10 M)
VDGR
60
Vdc
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tpv10 ms)
VGS
"15
"20
Vdc
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tpv10 s)
ID
IDM
18
10
54
Adc
Apk
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
Total Power Dissipation @ TA = 25°C (Note 1.)
PD
55
0.36
2.1
W
W/
°C
W
Operating and Storage Temperature Range
TJ, Tstg
–55 to
+175
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc,
L = 1.0 mH, IL(pk) = 12 A, VDS = 60 Vdc)
EAS
72
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
R
θJC
R
θJA
R
θJA
2.73
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. Repetitive rating; pulse width limited by maximum junction temperature.
2500/Tape & Reel
18 AMPERES
60 VOLTS
RDS(on) = 0.065
Device
Package
Shipping
ORDERING INFORMATION
NTD18N06L
DPAK
75 Units/Rail
DPAK
CASE 369A
STYLE 2
1 2
3
4
http://onsemi.com
N–Channel
D
S
G
NTD18N06L–1
DPAK
75 Units/Rail
MARKING
DIAGRAM
1
Gate
4
Drain
2
Drain
3
Source
NTD18N06L
= Device Code
Y
= Year
WW
= Work Week
NTD18N06LT4
DPAK
PIN ASSIGNMENT
YWW
NTD
18N06L
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD18N06L-1G | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06LG | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06LG | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD18N06LT4 | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06LT4G | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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