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参数资料
| 型号： | NTD18N06L-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-252AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 18A条（丁）|对252AA |
| 文件页数： | 5/12页 |
| 文件大小： | 88K |
| 代理商： | NTD18N06L-1 |
NTD18N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 3.)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
70
57.6
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
–
1.0
10
Adc
Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)
IGSS
–
±100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage (Note 3.)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.8
5.2
2.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (Note 3.)
(VGS = 5.0 Vdc, ID = 9.0 Adc)
RDS(on)
–
54
65
m
Static Drain–to–Source On–Resistance (Note 3.)
(VGS = 5.0 Vdc, ID = 18 Adc)
(VGS = 5.0 Vdc, ID = 9.0 Adc, TJ = 150°C)
VDS(on)
–
1.0
0.86
1.3
–
Vdc
Forward Transconductance (Note 3.) (VDS = 7.0 Vdc, ID = 9.0 Adc)
gFS
–
13.5
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
482
675
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
166
230
Transfer Capacitance
f = 1.0 MHz)
Crss
–
56
80
SWITCHING CHARACTERISTICS (Note 4.)
Turn–On Delay Time
td(on)
–
9.9
20
ns
Rise Time
(VDD = 30 Vdc, ID = 18 Adc,
VGS =50Vdc
tr
–
79
160
Turn–Off Delay Time
VGS = 5.0 Vdc,
RG = 9.1 ) (Note 3.)
td(off)
–
19
40
Fall Time
RG 9.1 ) (Note 3.)
tf
–
38
80
Gate Charge
(V
48 Vd
I
18 Ad
QT
–
11
22
nC
(VDS = 48 Vdc, ID = 18 Adc,
VGS = 5.0 Vdc) (Note 3.)
Q1
–
3.2
–
VGS = 5.0 Vdc) (Note 3.)
Q2
–
6.5
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 18 Adc, VGS = 0 Vdc) (Note 3.)
(IS = 18 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
–
0.94
0.83
1.15
–
Vdc
Reverse Recovery Time
(I
18 Ad
V
0 Vd
trr
–
41
–
ns
(IS = 18 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (Note 3.)
ta
–
26
–
dIS/dt = 100 A/s) (Note 3.)
tb
–
15
–
Reverse Recovery Stored Charge
QRR
–
0.057
–
C
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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