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参数资料
| 型号： | NTD18N06L-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-252AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 18A条（丁）|对252AA |
| 文件页数： | 4/12页 |
| 文件大小： | 88K |
| 代理商： | NTD18N06L-1 |
NTD18N06L
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NTD18N06L/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD18N06L-1G | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06LG | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06LG | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD18N06LT4 | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06LT4G | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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