参数资料
型号: NTLTD7900ZR2G
厂商: ON Semiconductor
文件页数: 7/8页
文件大小: 0K
描述: MOSFET PWR N-CHAN 9A 20V 8MICRO
产品变化通告: Product Obsolescence 21/Jan/2010
标准包装: 1
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 26 毫欧 @ 6.5A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 18nC @ 4.5V
输入电容 (Ciss) @ Vds: 15pF @ 16V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: Micro8?
包装: 剪切带 (CT)
其它名称: NTLTD7900ZR2GOSCT
NTLTD7900ZR2
PACKAGE DIMENSIONS
Micro8 LEADLESS
CASE 846C--01
ISSUE C
INDEX AREA
2X
0.15 T
2X
0.15 T
NOTE 4
0.10 T W Y
0.05 T W
D 8X
G 6X
8
7
6
5
A
TOP VIEW
E
1
2
3
4
W
Y
B
L
F
P
8X
T
J
8
7
6
5
0.10 T
8X
0.08 T
SIDE VIEW
L1
SEATING
PLANE
AA
NOTE 6
K AA
C
NOTE 4
NOTES:
1. DIMENSIONS AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. THE TERMINAL #1 IDENTIFIER AND TERMINAL
NUMBERING CONVENTION SHALL CONFORM TO
JESD 95--1 SPP--012. DETAILS OF TERMINAL #1
IDENTIFIER ARE OPTIONAL, BUT MUST BE
LOCATED WITHIN THE ZONE INDICATED. THE
TERMINAL #1 IDENTIFIER MAY BE EITHER A
MOLD OR MARKED FEATURE.
4. DIMENSION D APPLIES TO METALLIZED
TERMINAL AND IS MEASURED BETWEEN
0.25 MM AND 0.30 MM FROM TERMINAL TIP.
DIMENSION L1 IS THE TERMINAL PULL BACK
FROM PACKAGE EDGE, UP TO 0.1 MM IS
ACCEPTABLE. L1 IS OPTIONAL.
5. DEPOPULATION IS POSSIBLE IN A
SYMMETRICAL FASHION.
6. OPTIONAL SIDE VIEW CAN SHOW LEADS 5 AND
8 REMOVED.
MILLIMETERS
DIM MIN MAX
A 3.30 BSC
B 3.30 BSC
C 0.85 0.95
D 0.25 0.35
E 1.30 1.50
F 2.55 2.75
G 0.65 BSC
H 0.95 1.15
J 0.25 BSC
K 0.00 0.05
L 0.35 0.45
L1 0.00 0.10
P 1.28 1.38
U 0.17 TYP
DETAIL Z
DETAIL Z
U
4X
H
VIEW AA--AA
1.23
0.40
8X
SOLDERING FOOTPRINT*
2.75
1.50
0.58
3.60
8X 0.33
0.65 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
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