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| 型号： | NTMD4884NFR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 3.3A 8-SOIC |
| 产品变化通告： | Wire Change 12/May/2009 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 48 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 360pF @ 15V |
| 功率 - 最大： | 770mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMD4884NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter MOSFET & Schottky
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 10 s Steady State (Note 1)
Junction-to-FOOT (Drain) Equivalent to R q JC
Junction-to-Ambient – Steady State (Note 2)
Symbol
R q JA
R q JA
R q JF
R q JA
Max
79
54
50
163
Unit
° C/W
1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
24
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
20
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
5.0
2.5
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 4.0 A
I D = 3.5 A
34
50
48
70
m W
Forward Transconductance
g FS
V DS = 5.0 V, I D = 4.0 A
10
S
Gate Resistance
R G
2.4
3.6
W
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
V GS = 4.5 V, V DS = 15 V,
I D = 4.0 A
280
60
32
2.8
0.4
1.2
360
80
42
4.2
pF
nC
Gate-to-Drain Charge
Q GD
1.0
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 15 V,
I D = 4.0 A
5.6
8.0
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t d(ON)
6.0
12
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
6.5
14
1.4
13
26
7.0
ns
DRAIN-TO-SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
T J = 25 ° C
0.8
1.0
V
I D = 1.3 A
T J = 125 ° C
0.65
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
t RR
t a
t b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 4.0 A
9.2
6.0
3.2
3.3
20
ns
nC
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