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| 型号： | NTMD6N02R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR N-CH DL 3.92A 20V 8SO |
| 产品变化通告： | Wire Change 20/Aug/2008 Product Discontinuation 20/Aug/2008 |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.92A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1100pF @ 16V |
| 功率 - 最大： | 730mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMD6N02R2OS |
NTMD6N02R2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted) (continued)
Rating
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche Energy ? Starting T J = 25 ° C
(V DD = 20 Vdc, V GS = 5.0 Vdc, Peak I L = 6.0 Apk, L = 20 mH, R G = 25 W )
Maximum Lead Temperature for Soldering Purposes for 10 seconds
Symbol
T J , T stg
E AS
T L
Value
?55 to +150
360
260
Unit
° C
mJ
° C
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted) (Note 5)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 25 ° C)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate?Body Leakage Current (V GS = +12 Vdc, V DS = 0 Vdc)
Gate?Body Leakage Current (V GS = ?12 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
I GSS
20
?
?
?
?
?
?
19.2
?
?
?
?
?
?
1.0
10
100
?100
Vdc
mV/ ° C
m Adc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = ?250 m Adc)
Temperature Coefficient (Negative)
V GS(th)
0.6
?
0.9
?3.0
1.2
?
Vdc
mV/ ° C
Static Drain?to?Source On?State Resistance
R DS(on)
W
(V GS = 4.5 Vdc, I D = 6.0 Adc)
(V GS = 4.5 Vdc, I D = 4.0 Adc)
(V GS = 2.7 Vdc, I D = 2.0 Adc)
(V GS = 2.5 Vdc, I D = 3.0 Adc)
?
?
?
?
0.028
0.028
0.033
0.035
0.035
0.043
0.048
0.049
Forward Transconductance (V DS = 12 Vdc, I D = 3.0 Adc)
g FS
?
10
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
785
1100
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 16 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
260
75
450
180
SWITCHING CHARACTERISTIC S (Notes 6 and 7)
Turn?On Delay Time
t d(on)
?
12
20
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 16 Vdc, I D = 6.0 Adc,
V GS = 4.5 Vdc,
R G = 6.0 W )
t r
t d(off)
t f
?
?
?
50
45
80
90
75
130
Turn?On Delay Time
t d(on)
?
11
18
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 16 Vdc, I D = 4.0 Adc,
V GS = 4.5 Vdc,
R G = 6.0 W )
t r
t d(off)
t f
?
?
?
35
45
60
65
75
110
Total Gate Charge
Gate?Source Charge
Gate?Drain Charge
(V DS = 16 Vdc,
V GS = 4.5 Vdc,
I D = 6.0 Adc)
Q tot
Q gs
Q gd
?
?
?
12
1.5
4.0
20
?
?
nC
5. Handling precautions to protect against electrostatic discharge is mandatory
6. Indicates Pulse Test: Pulse Width = 300 m s max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMD6N02R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 6.0 Amps， 20 Volts |
| NTMD6N02R2_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 6.0 Amps, 20 Volts |
| NTMD6N02R2G | 功能描述:MOSFET NFET 20V 0.035R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMD6N03R2 | 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMD6N03R2G | 功能描述:MOSFET NFET 30V SPCL TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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