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| 型号： | NTMFS5832NLT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 110A SO-8FL |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.2 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 51nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2700pF @ 25V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 标准包装 |
| 其它名称： | NTMFS5832NLT1GOSDKR |
NTMFS5832NL
Power MOSFET
40 V, 111 A, 4.2 m W
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
http://onsemi.com
R DS(ON) MAX
I D MAX
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Gate ? to ? Source Voltage
V GS
Continuous Drain
I D
T A = 25 ° C
Current R q JA
T A = 70 ° C
(Note 1)
Value
40
± 20
20
16
Unit
V
V
A
40 V
4.2 m W @ 10 V
6.5 m W @ 4.5 V
D (5)
111 A
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 70 ° C
T C = 25 ° C
T C = 70 ° C
P D
I D
3.1
1.9
111
89
W
A
G (4)
S (1,2,3)
N ? CHANNEL MOSFET
R q JC (Note 1)
S
S
Power Dissipation T C = 25 ° C
T C = 70 ° C
Pulsed Drain t p = 10 m s
Current
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (L = 0.1 mH )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
P D
I DM
T J , T STG
I S
EAS
IAS
T L
96
61
443
? 55 to
+150
111
134
52
260
W
A
° C
A
mJ
A
° C
1
DFN5
(SO ? 8FL)
CASE 488AA
STYLE 1
A
Y
W
MARKING
DIAGRAM
D
S
5832NL
AYWZZ
G
D
= Assembly Location
= Year
= Work Week
D
D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
ZZ
= Lot Traceability
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
Junction ? to ? Case (Drain) (Note 1)
R q JC
1.3
Device
Package
Shipping ?
Junction ? to ? Ambient Steady State
(Note 1)
R q JA
40
° C/W
NTMFS5832NLT1G
DFN5
(Pb ? Free)
1500/Tape & Reel
Junction ? to ? Ambient Steady State R q JA 75
(Note 2)
1. Surface ? mounted on FR4 board using 1 sq ? in pad
(Cu area = 1.127 in sq [2 oz] inclusing traces).
2. Surface ? mounted on FR4 board using 0.155 in sq (100mm 2 ) pad size.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 1
1
Publication Order Number:
NTMFS5832NL/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS5834NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 75 A, 9.3 m, Single N.Channel |
| NTMFS5834NLT1G | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTMFS5844NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 V, 61 A, 12 m, Single N.Channel |
| NTMFS5844NLT1G | 功能描述:MOSFET 60V NCH T2 SO8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NT-MIL 1/2-0-SP | 功能描述:热收缩管和套管 HS-TUBING 1/2" BK PRICE PER FT RoHS:否 制造商:3M Electronic Specialty 类型:Tubing 材料:Polyolefin, Flexible 颜色:Clear 最低收缩温度:+ 100 C 恢复直径: 长度:100 ft 内径:1.5 in 收缩率:2:1 |
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