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| 型号： | NTMFS5832NLT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 110A SO-8FL |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.2 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 51nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2700pF @ 25V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 标准包装 |
| 其它名称： | NTMFS5832NLT1GOSDKR |
NTMFS5832NL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
40
34.2
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 40 V
T J = 25 ° C
T J = 125 ° C
1
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
6.4
3.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 20 A
I D = 20 A
3.1
5.0
4.2
6.5
m W
Forward Transconductance
g FS
V DS = 15 V, I D = 20 A
21
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C ISS
2700
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Plateau Voltage
Gate Resistance
C OSS
C RSS
Q G(TOT)
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GP
R G
V GS = 0 V, f = 1 MHz, V DS = 25 V
V GS = 4.5 V, V DS = 20 V; I D = 20 A
V GS = 10 V, V DS = 20 V; I D = 20 A
V GS = 4.5 V, V DS = 20 V; I D = 20 A
360
250
25
51
2.0
8.0
12.7
3.2
1.2
pF
nC
V
W
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
13
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
t d(ON)
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 20 V,
I D = 10 A, R G = 1.0 W
V GS = 10 V, V DS = 20 V,
I D = 10 A, R G = 1.0 W
24
27
8.0
10
18
32
5.0
ns
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 5 A
T J = 25 ° C
T J = 125 ° C
0.73
0.57
1.2
V
Reverse Recovery Time
t RR
28.6
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dIS/dt = 100 A/ m s,
I S = 10 A
14
14.5
23.4
ns
nC
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS5834NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 75 A, 9.3 m, Single N.Channel |
| NTMFS5834NLT1G | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTMFS5844NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 V, 61 A, 12 m, Single N.Channel |
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| NT-MIL 1/2-0-SP | 功能描述:热收缩管和套管 HS-TUBING 1/2" BK PRICE PER FT RoHS:否 制造商:3M Electronic Specialty 类型:Tubing 材料:Polyolefin, Flexible 颜色:Clear 最低收缩温度:+ 100 C 恢复直径: 长度:100 ft 内径:1.5 in 收缩率:2:1 |
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