参数资料
型号: OM13032,598
厂商: NXP Semiconductors
文件页数: 39/74页
文件大小: 0K
描述: BOARD EVAL LPC11U24
标准包装: 1
类型: MCU
适用于相关产品: LPC11U24
所含物品:
其它名称: 568-8599
LPC11U2X
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 2.2 — 11 March 2014
44 of 74
NXP Semiconductors
LPC11U2x
32-bit ARM Cortex-M0 microcontroller
10. Dynamic characteristics
10.1 Flash memory
[1]
Number of program/erase cycles.
[2]
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
10.2 External clock
[1]
Parameters are valid over operating temperature range unless otherwise specified.
[2]
Typical ratings are not guaranteed. The values listed are at room temperature (25
C), nominal supply
voltages.
Table 9.
Flash characteristics
Tamb = 40 C to +85 C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Nendu
endurance
[1] 10000
100000
-
cycles
tret
retention time
powered
10
-
years
unpowered
20
-
years
ter
erase time
sector or multiple
consecutive sectors
95
100
105
ms
tprog
programming time
[2] 0.95
1
1.05
ms
Table 10.
EEPROM characteristics
Tamb = 40 Cto+85 C; VDD = 2.7 V to 3.6 V. Based on JEDEC NVM qualification. Failure rate <
10 ppm for parts as specified below.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Nendu
endurance
100000
1000000
-
cycles
tret
retention time
powered
100
200
-
years
unpowered
150
300
-
years
tprog
programming
time
64 bytes
-
2.9
-
ms
Table 11.
Dynamic characteristic: external clock
Tamb = 40 C to +85 C; VDD over specified ranges.[1]
Symbol
Parameter
Conditions
Min
Typ[2]
Max
Unit
fosc
oscillator frequency
1
-
25
MHz
Tcy(clk)
clock cycle time
40
-
1000
ns
tCHCX
clock HIGH time
Tcy(clk) 0.4
-
ns
tCLCX
clock LOW time
Tcy(clk) 0.4
-
ns
tCLCH
clock rise time
-
5
ns
tCHCL
clock fall time
-
5
ns
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