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| 型号： | PF48F4400P0VBQ0 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 32M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 |
| 封装： | 8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 |
| 文件页数： | 22/102页 |
| 文件大小： | 1609K |
| 代理商： | PF48F4400P0VBQ0 |
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1-Gbit P30 Family
April 2005
22
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
4.3
SCSP Configurations
WP#
Input
WRITE PROTECT:
Active low input. WP# low enables the lock-down mechanism. Blocks in lock-
down cannot be unlocked with the Unlock command. WP# high overrides the lock-down function
enabling blocks to be erased or programmed using software commands.
VPP
Power/
lnput
Erase and Program Power:
A valid voltage on this pin allows erasing or programming. Memory
contents cannot be altered when V
PP
≤
V
PPLK
. Block erase and program at invalid V
PP
voltages
should not be attempted.
Set V
= V
for in-system program and erase operations. To accommodate resistor or diode drops
from the system supply, the V
level of V
can be as low as V
min. V
must remain above V
PPL
min to perform in-system flash modification. VPP may be 0 V during read operations.
V
can be applied to main blocks for 1000 cycles maximum and to parameter blocks for 2500
cycles.
VPP can be connected to 9 V for a cumulative total not to exceed 80 hours. Extended use of
this pin at 9 V may reduce block cycling capability.
VCC
Power
Device Core Power Supply:
Core (logic) source voltage. Writes to the flash array are inhibited when
V
CC
≤
V
LKO
. Operations at invalid V
CC
voltages should not be attempted.
VCCQ
Power
Output Power Supply:
Output-driver source voltage.
VSS
Power
Ground:
Connect to system ground. Do not float any VSS connection.
RFU
—
Reserved for Future Use:
Reserved by Intel for future device functionality and enhancement. These
should be treated in the same way as a Do Not Use (DU) signal.
DU
—
Do Not Use:
Do not connect to any other signal, or power supply; must be left floating.
NC
—
No Connect:
No internal connection; can be driven or floated.
Table 4.
QUAD+ SCSP Signal Descriptions (Sheet 2 of 2)
Symbol
Type
Name and Function
Table 5.
Stacked Easy BGA Chip Select Logic
Stack Combination
Selected Flash
Die #1
Selected Flash
Die #2
1-die
F1-CE#
-
2-die
F1-CE# + A25 (V
IL
)
F1-CE# + A25 (V
IH
)
Table 6.
QUAD+ SCSP Chip Select Logic
Stack
Combination
Selected Flash
Die #1
Selected Flash
Die #2
Selected Flash
Die #3
Selected Flash
Die #4
1-die
F1-CE#
-
-
-
2-die
F1-CE# + A24 (V
IL
)
F1-CE# + A24 (V
IH
)
-
-
4-die
F1-CE# + A24 (V
IL
)
F1-CE# + A24 (V
IH
)
F2-CE# + A24 (V
IL
)
F2-CE# + A24 (V
IH
)
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| PF48F3000P0ZTQ0 | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:10-6 |
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相关代理商/技术参数 |
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| PF48F4400P0VBQ0A | 功能描述:IC FLASH 512MBIT 85NS 88TPBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| PF48F4400P0VBQ2E | 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 512MBIT 85NS TFBGA |
| PF48F4400P0VBQ2F | 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Tape and Reel |
| PF48F4400P0VBQE0 | 功能描述:IC FLASH 512MBIT 100NS 88SCSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
| PF48F4400P0VBQE3 | 功能描述:IC FLASH 512MBIT 100NS 88SCSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
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