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| 型号： | PF48F4400P0VBQ0 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 32M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 |
| 封装： | 8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 |
| 文件页数： | 42/102页 |
| 文件大小： | 1609K |
| 代理商： | PF48F4400P0VBQ0 |
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1-Gbit P30 Family
April 2005
42
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
W14
t
WHGL
WE# high to OE# low
0
-
ns
1,2,9
W16
t
WHQV
WE# high to read valid
t
AVQV
+ 35
-
ns
1,2,3,6,1
0
Write to Asynchronous Read Specifications
W18
t
WHAV
WE# high to Address valid
0
-
ns
1,2,3,6,8
Write to Synchronous Read Specifications
W19
t
WHCH/L
WE# high to Clock valid
19
-
ns
1,2,3,6,1
0
W20
t
WHVH
WE# high to ADV# high
19
-
ns
Write Specifications with Clock Active
W21
t
VHWL
ADV# high to WE# low
-
20
ns
1,2,3,11
W22
t
CHWL
Clock high to WE# low
-
20
ns
Notes:
1.
2.
3.
4.
Write timing characteristics during erase suspend are the same as write-only operations.
A write operation can be terminated with either CE# or WE#.
Sampled, not 100% tested.
Write pulse width low (t
WLWH
or t
ELEH
) is defined from CE# or WE# low (whichever occurs last) to
CE# or WE# high (whichever occurs first). Hence, t
WLWH
= t
ELEH
= t
WLEH
= t
ELWH
.
Write pulse width high (t
WHWL
or t
EHEL
) is defined from CE# or WE# high (whichever occurs first) to
CE# or WE# low (whichever occurs last). Hence, t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
).
t
WHVH
or t
must be met when transitioning from a write cycle to a synchronous burst read.
V
PP
and WP#
should be at a valid level until erase or program success is determined.
This specification is only applicable when transitioning from a write cycle to an asynchronous read.
See spec W19 and W20 for synchronous read.
When doing a Read Status operation following any command that alters the Status Register, W14 is
20 ns.
Add 10 ns if the write operations results in a RCR or block lock status change, for the subsequent
read operation to reflect this change.
These specs are required only when the device is in a synchronous mode and clock is active during
address setup phase.
5.
6.
7.
8.
9.
10.
11.
Table 18.
AC Write Specifications (Sheet 2 of 2)
Num
Symbol
Parameter
Min
Max
Units
Notes
Figure 22.
Write-to-Write Timing
W1
W7
W4
W7
W4
W3
W9
W3
W6
W2
W6
W2
W8
W8
W5
W5
Address [A]
CE# [E}
WE# [W]
OE# [G]
Data [D/Q]
RST# [P]
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| PF48F3000P0ZTQ0 | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:10-6 |
| PF48F4000P0ZTQ0 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
| PF48F0P0ZTQ0 | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:10-98 |
| PF48F2P0ZTQ0 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
相关代理商/技术参数 |
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| PF48F4400P0VBQ0A | 功能描述:IC FLASH 512MBIT 85NS 88TPBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| PF48F4400P0VBQ2E | 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 512MBIT 85NS TFBGA |
| PF48F4400P0VBQ2F | 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Tape and Reel |
| PF48F4400P0VBQE0 | 功能描述:IC FLASH 512MBIT 100NS 88SCSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
| PF48F4400P0VBQE3 | 功能描述:IC FLASH 512MBIT 100NS 88SCSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
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