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| 型号： | PF48F4400P0VBQ0 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 32M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 |
| 封装： | 8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 |
| 文件页数： | 54/102页 |
| 文件大小： | 1609K |
| 代理商： | PF48F4400P0VBQ0 |
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1-Gbit P30 Family
April 2005
54
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
However, for a synchronous non-array read, the same word of data will be output on successive
clock edges until the burst length requirements are satisfied. Refer to the following waveforms for
more detailed information:
Figure 19, “Synchronous Single-Word Array or Non-array Read Timing” on page 39
Figure 20, “Continuous Burst Read, showing an Output Delay Timing” on page 40
Figure 21, “Synchronous Burst-Mode Four-Word Read Timing” on page 41
10.3
Read Configuration Register
The Read Configuration Register (RCR) is used to select the read mode (synchronous or
asynchronous), and it defines the synchronous burst characteristics of the device. To modify RCR
settings, use the Configure Read Configuration Register command (see
Section 9.2, “Device
Commands” on page 50
).
RCR contents can be examined using the Read Device Identifier command, and then reading from
offset 0x05 (see
Section 14.2, “Read Device Identifier” on page 76
).
The RCR is shown in
Table 22
. The following sections describe each RCR bit.
Table 22.
Read Configuration Register Description (Sheet 1 of 2)
Read Configuration Register (RCR)
Read
Mode
RES
Latency Count
WAIT
Polarity
Data
Hold
WAIT
Delay
Burst
Seq
CLK
Edge
RES
RES
Burst
Wrap
Burst Length
RM
R
LC[2:0]
WP
DH
WD
BS
CE
R
R
BW
BL[2:0]
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Bit
Name
Description
15
Read Mode (RM)
0 = Synchronous burst-mode read
1 = Asynchronous page-mode read (default)
14
Reserved (R)
Reserved bits should be cleared (0)
13:11
Latency Count (LC[2:0])
010 =Code 2
011 =Code 3
100 =Code 4
101 =Code 5
110 =Code 6
111 =Code 7 (default)
(Other bit settings are reserved)
10
Wait Polarity (WP)
0 =WAIT signal is active low
1 =WAIT signal is active high (default)
9
Data Hold (DH)
0 =Data held for a 1-clock data cycle
1 =Data held for a 2-clock data cycle (default)
8
Wait Delay (WD)
0 =WAIT deasserted with valid data
1 =WAIT deasserted one data cycle before valid data (default)
7
Burst Sequence (BS)
0 =Reserved
1 =Linear (default)
6
Clock Edge (CE)
0 = Falling edge
1 = Rising edge (default)
5:4
Reserved (R)
Reserved bits should be cleared (0)
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| PF48F3000P0ZTQ0 | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:10-6 |
| PF48F4000P0ZTQ0 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
| PF48F0P0ZTQ0 | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:10-98 |
| PF48F2P0ZTQ0 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
相关代理商/技术参数 |
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| PF48F4400P0VBQ0A | 功能描述:IC FLASH 512MBIT 85NS 88TPBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| PF48F4400P0VBQ2E | 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 512MBIT 85NS TFBGA |
| PF48F4400P0VBQ2F | 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Tape and Reel |
| PF48F4400P0VBQE0 | 功能描述:IC FLASH 512MBIT 100NS 88SCSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
| PF48F4400P0VBQE3 | 功能描述:IC FLASH 512MBIT 100NS 88SCSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
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