- 您现在的位置：买卖IC网 > Datasheet目录502 > QS8K2TR (Rohm Semiconductor)MOSFET 2N-CH 30V 3.5A TSMT8 Datasheet资料下载
参数资料
| 型号： | QS8K2TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 3.5A TSMT8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 54 毫欧 @ 3.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 4.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 285pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD |
| 供应商设备封装： | TSMT8 |
| 包装： | 标准包装 |
| 其它名称： | QS8K2TRDKR QS8K2TRDKR-ND |
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
R1102A
相关PDF资料 |
PDF描述 |
|---|---|
| QSB320FTR | PHOTOTRANSISTOR IR 880NM 2-PLCC |
| QSB34 | PHOTODIODE GULL WING SMD |
| QSB363CYR | PHOTOTRANSISTOR IR GULL WING 5MM |
| QSB363GR | PHOTOTRANS IR 940NM GW TOPLOOKER |
| QSC112CC6R0 | PHOTOTRANSISTOR IR 880NM 3MM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QS8K51TR | 制造商:ROHM Semiconductor 功能描述:QS8K51TR - Tape and Reel 制造商:ROHM Semiconductor 功能描述:MOSFET 2N-CH 30V 2A TSMT8 |
| QS8M11 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch + Pch MOSFET |
| QS8M11TCR | 制造商:ROHM Semiconductor 功能描述:TRANS MOSFET N/P-CH 30V 3.5A/3A 8-PIN TSMT T/R - Tape and Reel 制造商:ROHM Semiconductor 功能描述:MOSFET N/P-CH 30V 3.5A TSMT8 |
| QS8M12 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch + Pch MOSFET |
| QS8M12TCR | 功能描述:MOSFET 4V Drive Nch + Pch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。