参数资料
型号: RB521S30,115
厂商: NXP Semiconductors
文件页数: 10/12页
文件大小: 235K
描述: DIODE SCHOTTKY 30V 200MA SOD523
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 500mV @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 30µA @ 10V
电容@ Vr, F: 25pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SC-79,SOD-523
供应商设备封装: SOD-523
包装: 标准包装
其它名称: 568-8471-6
RB521S30_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 7 of 12
NXP Semiconductors
RB521S30
200 mA low VF
MEGA Schottky barrier recti?er
8. Test information
FR4 PCB, mounting pad for cathode 1 cm2
Tj
= 150
°C
(1)
δ
= 1; DC
(2)
δ
= 0.5; f = 20 kHz
(3)
δ
= 0.2; f = 20 kHz
(4)
δ
= 0.1; f = 20 kHz
Tj
= 150
°C
(1)
δ
= 1; DC
(2)
δ
= 0.5; f = 20 kHz
(3)
δ
= 0.2; f = 20 kHz
(4)
δ
= 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
solder point temperature; typical values
Tamb
(
°C)
0 50 100 150 17525
75
125
006aab718
0.1
0.2
0.3
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tsp
(
°C)
0 50 100 150 17525
75
125
006aab719
0.1
0.2
0.3
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
(1) IR
=1mA
Input signal: reverse pulse rise time tr
= 0.6 ns; reverse voltage pulse duration tp
= 100 ns; duty cycle
δ
= 0.05
Oscilloscope: rise time tr
= 0.35 ns
Fig 11. Reverse recovery time test circuit and waveforms
trr
(1)
+
I
F
t
output signal
tr
tp
t
10 %
90 %
VR
input signal
V = VR +
IF ′
RS
RS = 50 W
IF
D.U.T.
Ri
= 50
W
SAMPLING
OSCILLOSCOPE
mga881
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