参数资料
型号: RB521S30,115
厂商: NXP Semiconductors
文件页数: 9/12页
文件大小: 235K
描述: DIODE SCHOTTKY 30V 200MA SOD523
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 500mV @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 30µA @ 10V
电容@ Vr, F: 25pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SC-79,SOD-523
供应商设备封装: SOD-523
包装: 标准包装
其它名称: 568-8471-6
RB521S30_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 6 of 12
NXP Semiconductors
RB521S30
200 mA low VF
MEGA Schottky barrier recti?er
f = 1 MHz; Tamb
=25°CTj
= 150
°C
(1)
δ
= 0.1
(2)
δ
= 0.2
(3)
δ
= 0.5
(4)
δ
=1
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Average forward power dissipation as a
function of average forward current; typical
values
Tj= 125°C
(1)δ
=1
(2)
δ
= 0.9
(3)
δ
= 0.8
(4)
δ
= 0.5
FR4 PCB, standard footprint
Tj
= 150
°C
(1)
δ
= 1; DC
(2)
δ
= 0.5; f = 20 kHz
(3)
δ
= 0.2; f = 20 kHz
(4)
δ
= 0.1; f = 20 kHz
Fig 7. Average reverse power dissipation as a
function of reverse voltage; typical values
Fig 8. Average forward current as a function of
ambient temperature; typical values
VR
(V)
03010
20
0.0 0.30.1
0.2
006aab714
35
Cd
(pF)
0
5
10
15
20
25
30
IF(AV)
(A)
006aab715
0.05
0.10
0.15
PF(AV)
(W)
0.0
(1)
(2)
(3)
(4)
VR
(V)
0255
10 15
20
0 50 100 150 17525
75
125
006aab716
0.175
PR(AV)
(W)
0.15
0.125
0.075
0.025
0.0
0.05
0.10
(1)
(2)
(3)
(4)
Tamb
(
°C)
006aab717
0.1
0.2
0.3
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
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