参数资料
型号: RB521S30,115
厂商: NXP Semiconductors
文件页数: 11/12页
文件大小: 235K
描述: DIODE SCHOTTKY 30V 200MA SOD523
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 500mV @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 30µA @ 10V
电容@ Vr, F: 25pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SC-79,SOD-523
供应商设备封装: SOD-523
包装: 标准包装
其它名称: 568-8471-6
RB521S30_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 8 of 12
NXP Semiconductors
RB521S30
200 mA low VF
MEGA Schottky barrier recti?er
The current ratings for the typical waveforms as shown in
Figure
8,
9
and
10
are
calculated according to the equations: with IIFAV()=
IM
×δ
M
de?ned as peak current,
FAV()
at DC, and with I
IRMS
=
IM
×δ
RMS
de?ned as RMS current.
8.1 Quality information
This product has been quali?ed in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test quali?cation for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package outline
Fig 12. Duty cycle de?nition
=
t1
t2
P
t
006aaa812
duty cycle d
t1
t2
IRMS
=
I
Fig 13. Package outline SOD523 (SC-79)
02-12-13
Dimensions in mm
1.65
1.25
1.55
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
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