参数资料
型号: RB521S30,115
厂商: NXP Semiconductors
文件页数: 6/12页
文件大小: 235K
描述: DIODE SCHOTTKY 30V 200MA SOD523
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 500mV @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 30µA @ 10V
电容@ Vr, F: 25pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SC-79,SOD-523
供应商设备封装: SOD-523
包装: 标准包装
其它名称: 568-8471-6
RB521S30_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 3 of 12
NXP Semiconductors
RB521S30
200 mA low VF
MEGA Schottky barrier recti?er
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Tj
=25°C prior to surge.
[3] Re?ow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR
are a signi?cant part of the total power losses.
[2] Re?ow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
Tj
junction temperature - 150°C
Tamb
ambient temperature
?55 +150
°C
Tstg
storage temperature
?65 +150
°C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance fromin free air
junction to ambient
[1][2]
[3]- - 455 K/W
[4]- - 300 K/W
[5]- - 250 K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[6]--90K/W
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