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参数资料
| 型号： | RJK0230DPA-00#J5A |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET DL N-CH 25V 20A WPAK |
| 标准包装： | 1 |
| FET 型： | 2 N 沟道（半桥） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A，50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 10A，10V |
| 闸电荷(Qg) @ Vgs： | 7.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1650pF @ 10V |
| 功率 - 最大： | 15W，35W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-WPAK-D |
| 包装： | 标准包装 |
| 其它名称： | RJK0230DPA-00#J5ADKR |
RJK0230DPA
Preliminary
? MOS2
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Body–drain diode reverse
Symbol
V (BR)DSS
I GSS
I DSS
V GS(off)
R DS(on)
R DS(on)
|y fs |
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t d(on)
t r
t d(off)
t f
V F
t rr
Min
25
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.5
1.7
140
6980
900
580
1.0
45
19
12
23
9.5
90
25
0.39
37
Max
—
±0.5
1
2.5
1.9
2.2
—
9650
—
—
2.2
—
—
—
—
—
—
—
—
—
Unit
V
? A
mA
V
m ?
m ?
S
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I D = 10 mA, V GS = 0
V GS = ±12 V, V DS = 0
V DS = 25 V, V GS = 0
V DS = 10 V, I D =1 mA
I D =25 A, V GS = 8 V Note4
I D = 25 A, V GS = 4.5 V Note4
I D = 25 A, V DS = 5 V Note4
V DS = 10 V
V GS = 0
f = 1MHz
V DD = 10 V
V GS = 4.5 V
I D = 50 A
V GS = 8 V, I D = 25 A
V DD ? 10 V
R L = 0.4 ?
R g = 4.7 ?
IF = 2 A, V GS = 0 Note4
IF = 50 A, V GS = 0
recovery time
Notes: 4. Pulse
R07DS0541EJ0110 Rev.1.10
Sep 12, 2011
di F / dt = 100 A/ ? s
Page 3 of 10
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