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参数资料
| 型号： | RJK03E2DNS-00#J5 |
| 厂商： | Renesas Electronics America |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 16A 8-HWSON |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 8A，10V |
| 闸电荷(Qg) @ Vgs： | 7.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1540pF @ 10V |
| 功率 - 最大： | 12.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-HWSON（3.3x3.3） |
| 包装： | 标准包装 |
| 其它名称： | RJK03E2DNS-00#J5DKR |
RJK03E2DNS
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
Symbol
V (BR)DSS
I GSS
I DSS
V GS(off)
R DS(on)
R DS(on)
|y fs |
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t d(on)
t r
t d(off)
t f
V DF
t rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
6.9
9.1
33
1100
157
78
1.2
7.3
3.1
1.8
8.6
3.9
33
4.7
0.82
13
Max
—
±0.1
1
2.5
9.0
12.7
—
1540
—
—
2.4
—
—
—
—
—
—
—
1.07
—
Unit
V
? A
? A
V
m ?
m ?
S
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I D = 10 mA, V GS = 0
V GS = ±20 V, V DS = 0
V DS = 30 V, V GS = 0
V DS = 10 V, I D = 1 mA
I D = 8 A, V GS = 10 V Note4
I D = 8 A, V GS = 4.5 V Note4
I D = 8 A, V DS = 5 V Note4
V DS = 10 V
V GS = 0
f = 1 MHz
V DD = 10 V
V GS = 4.5 V
I D = 16 A
V GS = 10 V, I D = 8 A
V DD ? 10 V
R L = 1.25 ?
Rg = 4.7 ?
I F = 16 A, V GS = 0 Note4
I F =16 A, V GS = 0
time
Notes: 4. Pulse test
R07DS0658EJ0300 Rev.3.00
Feb 01, 2012
di F / dt = 100 A/ ? s
Page 2 of 6
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