参数资料
型号: RSD050N06TL
厂商: Rohm Semiconductor
文件页数: 5/6页
文件大小: 0K
描述: MOSFET N-CH 60V 5A SOT428
产品目录绘图: MOSFET SOT-428
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 109 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 3V @ 1mA
闸电荷(Qg) @ Vgs: 8nC @ 10V
输入电容 (Ciss) @ Vds: 290pF @ 10V
功率 - 最大: 15W
安装类型: 表面贴装
封装/外壳: SOT-428
供应商设备封装: CPT3
包装: 标准包装
其它名称: RSD050N06TLDKR
RSD050N06
Fig.13 Typical Capacitance vs. Drain-Source Voltage
1000
T a =25 ° C
f=1MHz
V GS =0V
C iss
100
 
100
10
1
Fig.14 Maximum Safe Operating Area
Operation in this area is limited by R DS(on)
( V GS = 10V )
DataSheet
P W = 100 μ s
P W = 1ms
C oss
0.1
T c =25 ° C
P W = 10ms
DC Operation
10
C rss
0.01
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage : V DS [V]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
T c =25 ° C
Single Pulse
Rth (ch-c) =8.33 ° C/W
Drain-Source Voltage : V DS [ V ]
1
0.1
0.01
0.001
Rth (ch-c) (t)=r(t) × Rth (ch-c)
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
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5/6
2014.02 - Rev.B
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