参数资料
型号: S29CD032J1JFAI122
厂商: SPANSION LLC
元件分类: PROM
英文描述: 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
封装: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件页数: 47/78页
文件大小: 1825K
代理商: S29CD032J1JFAI122
September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
49
Pr el im i n a r y
ICC5 in CMOS Compatible on page 52 represents the standby current specification.
Caution: Entering standby mode via the RESET# pin also resets the device to read mode and
floats the data I/O pins. Furthermore, entering ICC7 during a program or erase operation leaves
erroneous data in the address locations being operated on at the time of the RESET# pulse.
These locations require updating after the device resumes standard operations. See Hardware
RESET# Input Operation for further discussion of the RESET# pin and its functions.
12.2 Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The automatic sleep
mode is independent of the CE#, WE# and OE# control signals. While in sleep mode, output data
is latched and always available to the system.
While in asynchronous mode, the device automatically enables this mode when addresses re-
main stable for tACC + 60 ns. Standard address access timings provide new data when addresses
are changed. While in synchronous mode, the device automatically enables this mode when ei-
ther the first active CLK level is greater than tACC or the CLK runs slower than 5 MHz. A new burst
operation is required to provide new data.
ICC8 in CMOS Compatible on page 52 represents the automatic sleep mode current specification.
12.3
Hardware RESET# Input Operation
The RESET# input provides a hardware method of resetting the device to reading array data.
When RESET# is driven low, the device immediately terminates any operation in progress,
tristates all outputs, resets the configuration register, and ignores all read/write commands for
the duration of the RESET# pulse. The device also resets the internal state machine to reading
array data. Any operation that was interrupted should be reinitiated once the device is ready to
accept another command sequence, in order to ensure data integrity.
When RESET# is held at VSS ±0.2 V, the device draws CMOS standby current (ICC4). If RESET#
is held at VIL but not within VSS ±0.2 V, the standby current is greater.
RESET# may be tied to the system reset circuitry, thus a system reset would also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains low until
the reset operation is internally complete. This action requires between 1 s and 7 s for either
Chip Erase or Sector Erase. The RY/BY# pin can be used to determine whether the reset opera-
tion is complete. Otherwise, allow for the maximum reset time of 11 s.
If RESET# is asserted when a program or erase operation is not executing (RY/BY# = 1), the
reset operation completes within 500 ns. The Simultaneous Read/Write feature of this device al-
lows the user to read a bank after 500 ns if the bank is in the read/reset mode at the time
RESET# is asserted. If one of the banks is in the middle of either a program or erase operation
when RESET# is asserted, the user must wait 11 s before accessing that bank.
Asserting RESET# active during Vcc and VIO power up is required to guarantee proper device
initialization until VCC and VIO have reached steady state voltages.
12.4 Output Disable (OE#)
When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the
high impedance state.
相关PDF资料
PDF描述
S29CD032J1MFAN120 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
S29CD032J1MQFN133 1M X 32 FLASH 2.7V PROM, 54 ns, PQFP80
S29CL016J0JQFI100 512K X 32 FLASH 3.3V PROM, 54 ns, PQFP80
S29CL016J0MFAI113 512K X 32 FLASH 3.3V PROM, 54 ns, PBGA80
S29CL016J0PQFI102 512K X 32 FLASH 3.3V PROM, 54 ns, PQFP80
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