参数资料
型号: S29CD032J1MFAI020
厂商: SPANSION LLC
元件分类: PROM
英文描述: 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
封装: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件页数: 18/78页
文件大小: 1825K
代理商: S29CD032J1MFAI020
September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
23
Pr el im i n a r y
Figure 8.2 Synchronous/Asynchronous State Diagram
The device outputs the initial word subject to the following operational conditions:
tIACC specification: The time from the rising edge of the first clock
cycle after addresses are latched to valid data on the device out-
puts.
Configuration register setting CR13-CR10: The total number of
clock cycles (wait states) that occur before valid data appears on
the device outputs. The effect is that tIACC is lengthened.
Like the main memory access, the Secured Silicon Sector memory is accessed with the same
burst or asynchronous timing as defined in the Configuration Register. However, the user must
recognize burst operations past the 256 byte Secured Silicon boundary returns invalid data.
Burst read operations occur only to the main flash memory arrays. The Configuration Register
and protection bits are treated as single cycle reads, even when burst mode is enabled. Read
operations to these locations results in the data remaining valid while OE# is at VIL, regardless
of the number of CLK cycles applied to the device.
Power-up/
Hardware Reset
Asynchronous Read
Mode Only
Synchronous Read
Mode Only
Set Burst Mode
Configuration Register
Command for
Synchronous Mode
(D15 = 0)
Set Burst Mode
Configuration Register
Command for
Asynchronous Mode
(D15 = 1)
相关PDF资料
PDF描述
S29CL016J0JFAI112 512K X 32 FLASH 3.3V PROM, 54 ns, PBGA80
S29CL016J0JFFI130 512K X 32 FLASH 3.3V PROM, 54 ns, PBGA80
S29CL016J0MQAI113 512K X 32 FLASH 3.3V PROM, 54 ns, PQFP80
S29CL016J0PQFI123 512K X 32 FLASH 3.3V PROM, 54 ns, PQFP80
S29CL016J1MFAI123 512K X 32 FLASH 3.3V PROM, 54 ns, PBGA80
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