参数资料
型号: S29CD032J1MFAI020
厂商: SPANSION LLC
元件分类: PROM
英文描述: 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
封装: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件页数: 36/78页
文件大小: 1825K
代理商: S29CD032J1MFAI020
September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
39
Pr el im i n a r y
8.8.6
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether
or not erasure has begun. (The sector erase timer does not apply to the chip erase command.)
If additional sectors are selected for erasure, the entire time-out also applies after each addi-
tional sector erase command. When the time-out period is complete, DQ3 switches from a "0"
to a "1." If the time between additional sector erase commands from the system can be assumed
to be less than 50 s, the system need not monitor DQ3. See Sector Erase on page 30 for more
details.
After the sector erase command is written, the system reads the status of DQ7 (Data# Polling)
or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, then reads
DQ3. If DQ3 is "1," the Embedded Erase algorithm has begun; all further commands (except
Erase Suspend) are ignored until the erase operation is complete. If DQ3 is "0," the device ac-
cepts additional sector erase commands.
To ensure the command has been accepted, the system software check the status of DQ3 prior
to and following each sub-sequent sector erase command. If DQ3 is high on the second status
check, the last command might not have been accepted. Table 8.9 shows the status of DQ3 rel-
ative to the other status bits.
8.8.7
RY/BY#: Ready/Busy#
The device provides a RY/BY# open drain output pin as a way to indicate to the host system that
the Embedded Algorithms are either in progress or have been completed. If the output of RY/
BY# is low, the device is busy with either a program, erase, or reset operation. If the output is
floating, the device is ready to accept any read/write or erase operation. When the RY/BY# pin
is low, the device will not accept any additional program or erase commands with the exception
of the Erase suspend command. If the device has entered Erase Suspend mode, the RY/BY# out-
put is floating. For programming, the RY/BY# is valid (RY/BY# = 0) after the rising edge of the
fourth WE# pulse in the four write pulse sequence. For chip erase, the RY/BY# is valid after the
rising edge of the sixth WE# pulse in the six write pulse sequence. For sector erase, the RY/BY#
is also valid after the rising edge of the sixth WE# pulse.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a 0 (busy)
until the internal reset operation is complete, which requires a time of tREADY (during Embedded
Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is
complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY#
pin is floating), the reset operation is completed in a time of tREADY (not during Embedded Algo-
rithms). The system can read data tRH after the RESET# pin returns to VIH.
Since the RY/BY# pin is an open-drain output, several RY/BY# pins can be tied together in par-
allel with a pull-up resistor to VCC. An external pull-up resistor is required to take RY/BY# to a
VIH level since the output is an open drain.
Table 8.9 shows the outputs for RY/BY#, DQ7, DQ6, DQ5, DQ3 and DQ2. Figure 18.2, Figure
18.6, Figure 18.8 and Figure 18.9 show RY/BY# for read, reset, program, and erase operations,
respectively.
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