参数资料
型号: SDIN2C2-2G
厂商: SanDisk
文件页数: 2/29页
文件大小: 0K
描述: IC INAND FLASH 2GB 169FBGA
标准包装: 112
格式 - 存储器: 闪存
存储器类型: 闪存 - NAND
存储容量: 16G(2G x 8)
速度: 50MHz
接口: SD/SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -25°C ~ 85°C
封装/外壳: 169-FBGA
供应商设备封装: 169-BGA(12x16)
包装: 托盘
其它名称: 585-1229
Revision 1.1
PRELIMINARY
SanDisk iNAND Product Manual
SanDisk ? Corporation general policy does not recommend the use of its products in life support applications where in a failure
or malfunction of the product may directly threaten life or injury. Per SanDisk Terms and Conditions of Sale, the user of SanDisk
products in life support applications assumes all risk of such use and indemnifies SanDisk against all damages. See “Disclaimer
of Liability.”
This document is for information use only and is subject to change without prior notice . SanDisk Corporation assumes no
responsibility for any errors that may appear in this document, nor for incidental or consequential damages resulting from the
furnishing, performance or use of this material. No part of this document may be reproduced, transmitted, transcribed, stored in
a retrievable manner or translated into any language or computer language, in any form or by any means, electronic,
mechanical, magnetic, optical, chemical, manual or otherwise, without the prior written consent of an officer of SanDisk
Corporation.
All parts of the SanDisk documentation are protected by copyright law and all rights are reserved.
SanDisk and the SanDisk logo are registered trademarks of SanDisk Corporation. Product names mentioned herein are for
identification purposes only and may be trademarks and/or registered trademarks of their respective companies.
? 2007 SanDisk Corporation. All rights reserved.
SanDisk products are covered or licensed under one or more of the following U.S. Patent Nos. 5,070,032; 5,095,344; 5,168,465;
5,172,338; 5,198,380; 5,200,959; 5,268,318; 5,268,870; 5,272,669; 5,418,752; 5,602,987. Other U.S. and foreign patents
awarded and pending.
Lit. No. 80-36-00592 Rev. 1.1 (D2)
02/07
Printed in U.S.A.
Revision History
January 2007 Revision 1.0—Preliminary draft of initial release
February 2007 Revision 1.1—Added TOC; removed Section 2.6; corrected Fig. 2-2; revised capacitor specifications and
part numbers; eliminated warranty section.
? 2007 SanDisk Corporation
i
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SDIN2C2-2G-T 功能描述:IC INAND FLASH 2GB 169FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
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