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| 型号： | SI2306BDS-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 3.16A SOT23-3 |
| 产品目录绘图： | SC75(A), SC89-3, SOT-23, SOT-323 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 47 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.5nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 305pF @ 15V |
| 功率 - 最大： | 750mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1661 (CN2011-ZH PDF) |
| 其它名称： | SI2306BDS-T1-GE3DKR |
Si2306BDS
Vishay Siliconix
SPECIFICATIONS T A = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
30
1.0
3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS ≥ 4.5 V, V GS = 10 V
6
± 100
0.5
10
nA
μA
A
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
R DS(on)
g fs
V SD
V GS = 10 V, I D = 3.5 A
V GS = 4.5 V, I D = 2.8 A
V DS = 4.5 V, I D = 2.5 A
I S = 1.25 A, V GS = 0 V
0.038
0.052
7.0
0.8
0.047
0.065
1.2
Ω
S
V
Dynamic
Gate Charge
Q g
V DS = 15 V, V GS = 5 V, I D = 2.5 A
3.0
4.5
Total Gate Charge
Gate-Source Charge
Q gt
Q gs
V DS = 15 V, V GS = 10 V, I D = 2.5 A
6
1.6
9
nC
Gate-Drain Charge
Q gd
0.6
Gate Resistance
R g
f = 1.0 MHz
2.5
5
7.5
Ω
Input Capacitance
C iss
305
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 15 V, V GS = 0 V, f = 1 MHz
65
29
pF
Switching
Turn-On Delay Time
t d(on)
7
11
Rise Time
Turn-Off Delay Time
Fall Time
Reverse Recovery Time
Body Diode Reverse Recovery Charge
t r
t d(off)
t f
t rr
Q rr
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 1.25 A, di/dt = 100 A/μs
12
14
6
14
6
18
25
10
21
10
ns
nC
Notes:
a. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
V GS = 10 thru 5 V
20
16
12
8
4V
16
12
8
T C = 125 °C
4
4
25 °C
0
3V
0
- 55 °C
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
相关PDF资料 |
PDF描述 |
|---|---|
| SI2307BDS-T1-GE3 | MOSFET P-CH 30V 2.5A SOT23-3 |
| SI2307CDS-T1-E3 | MOSFET P-CH 30V 3.5A SOT23-3 |
| SI2308BDS-T1-E3 | MOSFET N-CH 60V 2.3A SOT23-3 |
| SI2312BDS-T1-GE3 | MOSFET N-CH 20V 3.9A SOT23-3 |
| SI2315BDS-T1-GE3 | MOSFET P-CH 12V 3A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI2306DS | 制造商:Vishay Siliconix 功能描述: |
| SI2306DS-T1 | 功能描述:MOSFET 30V 3.5A 1.25 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI2306DS-T1-E3 | 功能描述:MOSFET 30V 3.5A 1.25 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI2306DS-T3 | 制造商:Vishay Intertechnologies 功能描述:30V, N-CHANNEL, 94mohm 4.5V RATED TR |
| SI2307 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:30V P-Channel Enhancement-Mode MOSFET |
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