参数资料
型号: SI2308BDS-T1-E3
厂商: Vishay Siliconix
文件页数: 6/10页
文件大小: 0K
描述: MOSFET N-CH 60V 2.3A SOT23-3
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 2.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 156 毫欧 @ 1.9A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 6.8nC @ 10V
输入电容 (Ciss) @ Vds: 190pF @ 30V
功率 - 最大: 1.66W
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 标准包装
其它名称: SI2308BDS-T1-E3DKR
New Product
Si2308BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
D u ty Cycle = 0.5
0.2
t 1
t 2
0.1
0.01
0.1
0.05
0.02
Single P u lse
N otes:
P DM
t 1
t 2
1. D u ty Cycle, D =
2. Per Unit Base = R thJA = 130 °C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69958 .
www.vishay.com
6
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
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