- 您现在的位置：买卖IC网 > Datasheet目录511 > SI4908DY-T1-GE3 (Vishay Siliconix)MOSFET N-CH DUAL 40V 5A 8-SOIC Datasheet资料下载
参数资料
| 型号： | SI4908DY-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 40V 5A 8-SOIC |
| 标准包装： | 2,500 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 4.1A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 355pF @ 20V |
| 功率 - 最大： | 2.75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Si4908DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
40
40
- 4.6
V
mV/°C
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.8
2.2
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 16 V
V DS = 40 V, V GS = 0 V
V DS = 40 V, V GS = 0 V, T J = 55 °C
V DS = 5 V, V GS = 10 V
20
100
1
10
nA
μA
A
Drain-Source On-State Resistance b
Forward Transconductance b
R DS(on)
g fs
V GS = 10 V, I D = 4.1 A
V GS = 4.5 V, I D = 3.8 A
V DS = 15 V, I D = 4.1 A
0.048
0.056
15
0.060
0.070
Ω
S
Dynamic
a
Input Capacitance
C iss
355
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 20 V, V GS = 0 V, I D = 1 MHz
50
29
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 20 V, V GS = 10 V, I D = 5 A
V DS = 20 V, V GS = 4.5 V, I D = 5 A
8
3.7
1.1
12
6
nC
Gate-Drain Charge
Q gd
1.4
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
R g
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 20 V, R L = 4 Ω
I D ? 1 A, V GEN = 10 V, R g = 1 Ω
V DD = 20 V, R L =4 Ω
I D ? 1 A, V GEN = 4.5 V, R g = 1 Ω
3.4
8
20
23
27
74
95
31
33
5.2
13
30
35
42
110
145
48
50
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
2.3
20
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 1.5 A
I F = 2 A, dI/dt = 100 A/μs, T J = 25 °C
0.8
26
26
13
13
1.2
40
40
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
相关PDF资料 |
PDF描述 |
|---|---|
| SI4914BDY-T1-E3 | MOSFET N-CH 30V 8-SOIC |
| SI4914DY-T1-E3 | MOSFET DUAL N-CH 30V 8-SOIC |
| SI4916DY-T1-GE3 | MOSFET DUAL N-CH 30V 8-SOIC |
| SI4920DY-T1-GE3 | MOSFET DUAL N-CH 30V 8-SOIC |
| SI4932DY-T1-GE3 | MOSFET N-CH DUAL 30V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4909DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 40 V (D-S) MOSFET |
| SI4909DY-T1-GE3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 40V 6.4A 8-Pin SOIC N T/R 制造商:Vishay Siliconix 功能描述:DUAL P-CHANNEL 40-V (D-S) MOSFET - Tape and Reel 制造商:Vishay Siliconix 功能描述:DUAL P-CHANNEL 40-V (D-S) MOSFET - Cut TR (SOS) 制造商:Vishay Siliconix 功能描述:MOSFET PP CH W/D DIOD 40V 8ASO8 制造商:Vishay Siliconix 功能描述:MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8 制造商:Vishay Siliconix 功能描述:MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.2W ;RoHS Compliant: Yes |
| SI4910DY | 制造商:VAISH 制造商全称:VAISH 功能描述:N-Channel 40-V (D-S) MOSFET |
| SI4910DY-T1-E3 | 功能描述:MOSFET DUAL N-CH 40V(D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4910DY-T1-GE3 | 功能描述:MOSFET 40V 6.0A 3.1W 27mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。