参数资料
型号: SI8461DB-T2-E1
厂商: Vishay Siliconix
文件页数: 2/9页
文件大小: 0K
描述: MOSFET P-CH D-S 20V MICROFOOT
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
开态Rds(最大)@ Id, Vgs @ 25° C: 100 毫欧 @ 1.5A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 24nC @ 8V
输入电容 (Ciss) @ Vds: 610pF @ 10V
功率 - 最大: 780mW
安装类型: 表面贴装
封装/外壳: 4-XFBGA,CSPBGA
供应商设备封装: 4-Microfoot
包装: 剪切带 (CT)
其它名称: SI8461DB-T2-E1CT
Si8461DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Ambient c, d
t = 10 s
t = 10 s
R thJA
55
125
70
160
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 20
- 12
2.5
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.4
- 1.0
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 20 V, V GS = 0 V
V DS = - 20 V, V GS = 0 V, T J = 70 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 1.5 A
- 10
0.083
± 100
-1
- 10
0.100
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 1.5 A
V GS = - 1.8 V, I D = - 1 A
0.098
0.115
0.118
0.140
Ω
V GS = - 1.5 V, I D = - 0.5 A
0.136
0.205
Forward Transconductance
a
g fs
V DS = - 10 V, I D = - 1 A
7
S
Dynamic b
Input Capacitance
C iss
610
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 10 V, V GS = 0 V, f = 1 MHz
120
95
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 10 V, V GS = - 8 V, I D = - 1 A
V DS = - 10 V, V GS = - 4.5 V, I D = 1 A
16
9.5
0.9
24
15
nC
Gate-Drain Charge
Q gd
2.6
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
R g
t d(on)
t r
t d(off)
V GS = - 0.1 V, f = 1 MHz
V DD = - 10 V, R L = 10 Ω
I D ? - 1 A, V GEN = - 4.5 V, R g = 1 Ω
6.5
15
25
35
25
40
55
Ω
Fall Time
Turn-On Delay Time
t f
t d(on)
10
7
15
15
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 10 V, R L = 10 Ω
I D ? - 1 A, V GEN = - 8 V, R g = 1 Ω
12
32
12
20
50
20
www.vishay.com
2
Document Number: 65001
S09-1502-Rev. B, 10-Aug-09
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