- 您现在的位置：买卖IC网 > Datasheet目录515 > SIHP30N60E-E3 (Vishay Siliconix)MOSFET N-CH 600V 29A TO220AB Datasheet资料下载
参数资料
| 型号： | SIHP30N60E-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 29A TO220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 29A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2600pF @ 100V |
| 功率 - 最大： | 250W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
SiHP30N60E
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
62
0.5
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 250 μA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 600 V, V GS = 0 V
V DS = 600 V, V GS = 0 V, T J = 150 °C
600
-
2.0
-
-
-
-
0.64
-
-
-
-
-
-
4.0
± 100
1
100
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 15 A
-
0.104
0.125
?
Forward Transconductance a
g fs
V DS = 8 V, I D = 3 A
-
5.4
-
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
V GS = 0 V,
V DS = 100 V,
f = 1.0 MHz
-
-
-
2600
138
3
-
-
-
Effective Output Capacitance, Energy
Related b
Effective Output Capacitance, Time
Related c
Total Gate Charge
C o(er)
C o(tr)
Q g
V DS = 0 V to 480 V, V GS = 0 V
-
-
-
98
346
85
-
-
130
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 15 A, V DS = 480 V
-
15
-
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
39
19
-
40
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
t r
t d(off)
t f
R g
V DD = 380 V, I D = 15 A,
V GS = 10 V, R g = 4.7 ?
f = 1 MHz, open drain
-
-
-
-
32
63
36
0.63
65
95
75
-
ns
?
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
29
65
A
Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
V SD
t rr
Q rr
I RRM
T J = 25 °C, I S = 15 A, V GS = 0 V
T J = 25 °C, I F = I S = 15 A,
dI/dt = 100 A/μs, V R = 20 V
-
-
-
-
-
402
7
32
1.3
605
15
65
V
ns
μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. C oss(er) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 % to 80 % V DSS .
c. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 % to 80 % V DSS .
S12-3103- Rev. E, 24-Dec-12
2
Document Number: 91456
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料 |
PDF描述 |
|---|---|
| SIHP5N50D-E3 | MOSFET N-CH 500V 5.3A TO220AB |
| SIHP6N40D-E3 | MOSFET N-CH 400V 6A TO-220AB |
| SIHP7N60E-GE3 | MOSFET N CH 600V 7A TO-220AB |
| SIHU3N50D-E3 | MOSFET N-CH 500V 3A TO251 IPAK |
| SIHU5N50D-E3 | MOSFET N-CH 500V 5.3A TO251 IPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIHP30N60E-GE3 | 功能描述:MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIHP30N60E-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N CH 600V 29A TO-220AB-3 制造商:Vishay Siliconix 功能描述:MOSFET, N CH, 600V, 29A, TO-220AB-3 |
| SIHP33N60E-GE3 | 功能描述:MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIHP33N60E-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N CH 600V 33A TO-220AB-3 |
| SIHP5N50D | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:D Series Power MOSFET |
发布紧急采购，3分钟左右您将得到回复。