参数资料
型号: SIZ700DT-T1-GE3
厂商: Vishay Siliconix
文件页数: 3/14页
文件大小: 0K
描述: MOSFET N-CH D-S 20V PPAK 1212-8
标准包装: 3,000
系列: TrenchFET®
FET 型: 2 个 N 沟道(双)
FET 特点: 标准
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 16A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.6 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.2V @ 250µA
闸电荷(Qg) @ Vgs: 35nC @ 10V
输入电容 (Ciss) @ Vds: 1300pF @ 10V
功率 - 最大: 2.36W,2.8W
安装类型: 表面贴装
封装/外壳: 6-PowerPair?
供应商设备封装: 6-PowerPair?
包装: 带卷 (TR)
New Product
SiZ700DT
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamic a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t d(on)
t r
t d(off)
Channel-1
V DD = 10 V, R L = 10 ?
I D ? 1 A, V GEN = 4.5 V, R g = 1 ?
Channel-2
V DD = 10 V, R L = 10 ?
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
9
13
8
8
25
52
15
20
15
15
40
80
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t f
t d(on)
t r
t d(off)
t f
I D ? 1 A, V GEN = 4.5 V, R g = 1 ?
Channel-1
V DD = 10 V, R L = 10 ?
I D ? 1 A, V GEN = 10 V, R g = 1 ?
Channel-2
V DD = 10 V, R L = 10 ?
I D ? 1 A, V GEN = 10 V, R g = 1 ?
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
8
15
8
12
9
8
25
47
8
10
15
25
15
20
15
15
40
75
15
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
14.7
16
60
60
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 2 A, V GS = 0 V
I S = 2.3 A, V GS = 0 V
Channel-1
I F = 2 A, dI/dt = 100 A/μs, T J = 25 °C
Channel-2
I F = 2.3 A, dI/dt = 100 A/μs, T J = 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
0.8
25
40
13
31
12
21
13
19
1.2
1.2
50
80
25
60
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69090
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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